BC635 / BC637 / BC639
Elektronische Bauelemente
NPN Type
Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
TO-92
14.3
±0.2
4.5
±0.2
FEATURE
High current transistor
4.55
±0.2
3.5
±0.2
0.46
+0.1
–0.1
(1.27 Typ.
)
0.43
+0.08
–0.07
1.25
–0.2
1 2 3
2.54
±0.1
+0.2
1: Emitter
2:
Collector
3:
Base
MAXIMUM RATINGS
(TA=25 C unless otherwise specified)
o
PARAMETERS
Collector - Emitter Voltage
BC635
BC637
BC639
Collector - Base Voltage
BC635
BC637
BC639
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction, Storage Temperature
o
o
SYMBOLS
V
CEO
VALUES
45
60
80
UNIT
V
V
V
V
V
V
V
A
W
o
V
CBO
45
60
100
V
EBO
I
C
P
C
T
J
,T
STG
5
1
0.625
150, -65 ~ 150
C
ELECTRICAL CHARACTERISTICS
(TA=25 C unless otherwise specified)
PARAMETERS
Collector - emitter breakdown voltage
Collector cut-off current
Emitter cut-off current
SYMBOL
V
(BR)CEO
I
CBO
I
EBO
h
FE(1)
h
FE(2)
DC current gain
h
FE(3)
Collector - emitter saturation voltage
Base - emitter voltage
Transition frequency
V
CE(sat)
V
BE
f
T
TEST CONDITIONS
I
C
=10mA, I
B
=0
BC635
BC637
V
CB
=30V, I
E
=0
V
EB
=5V, I
B
=0
V
CE
=2V, I
C
=5mA
V
CE
=2V, I
C
=150mA
BC635
BC637-10/BC639-10
BC637-16/BC639-16
V
CE
=2V, I
C
=500mA
I
C
=500mA, I
B
=50mA
V
CE
=2V, I
C
=500mA
V
CE
=5V, I
C
=10mA, f=50MHz
BC639
MIN
45
60
80
0.1
0.1
25
40
63
100
25
250
160
250
0.5
1
100
V
V
MHz
TYP
MAX
UNIT
V
V
V
µA
µA
CLASSIFICATION OF h
FE(2)
RANK
RANGE
BC635
40-250
BC637-10, BC639-10
63-160
BC637-16, BC639-16
100-250
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of 2
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
