BC636/638/640
Elektronische Bauelemente
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
TO-92
4.55
±0.2
PNP Type
Plastic Encapsulate Transistors
FEATURE
Power Dissipation:
P
CM
: 0.83 mW (Tamb=25
o
C)
3.5
±0.2
4.5
±0.2
14.3
±0.2
0.46
+0.1
–0.1
(1.27 Typ.
)
1.25
–0.2
1 2 3
2.54
±0.1
o
+0.2
0.43
+0.08
–0.07
1: Emitter
2:
Collector
3:
Base
MAXIMUM RATINGS
(TA=25 C unless otherwise specified)
PARAMETERS
Collector - Emitter Voltage
BC636
BC638
BC640
Collector - Base Voltage
BC636
BC638
BC640
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction, Storage Temperature
Thermal Resistance from Junction to Ambient
o
SYMBOLS
V
CEO
VALUES
-45
-60
-80
UNIT
V
V
V
V
V
V
V
A
A
mA
o
V
CBO
-45
-60
-100
V
EBO
I
C
I
CP
I
B
T
J
,T
STG
R
θJA*
-5
-1
-1.5
100
150, -65 ~ 150
150
C
K/w
ELECTRICAL CHARACTERISTICS
(TA=25 C unless otherwise specified)
PARAMETERS
Collector - emitter breakdown voltage
Collector cut-off current
Emitter cut-off current
SYMBOL
V
(BR)CEO
I
CBO
I
EBO
h
FE(1)
DC current gain
h
FE(2)
h
FE(3)
Collector - emitter saturation voltage
Base - emitter voltage
Transition frequency
V
CE(sat)
V
BE(ON)
f
T
V
CB
=-30V, I
E
=0
V
EB
=-5V, I
B
=0
V
CE
=-2V, I
C
=-5mA
V
CE
=-2V, I
C
=-150mA
BC636-10
BC636-16, BC638-16, BC640-16
TEST CONDITIONS
I
C
=10mA, I
B
=0
BC636
BC638
BC640
MIN
-45
-60
-80
TYP
MAX
UNIT
V
V
V
µA
µA
-0.1
-0.1
40
63
100
25
160
250
-0.5
-1
100
V
CE
=-2V, I
C
=-500mA
I
C
=-500mA, I
B
=-50mA
V
CE
=-2V, I
C
=-500mA
V
CE
=-5V, I
C
=-50mA, f=100MHz
V
V
MHz
CLASSIFICATION OF h
FE(2)
RANK
RANGE
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
BC636-10
63-160
BC636-16, BC638-16, BC640-16
100-250
Any changing of specification will not be informed individual
Page 1 of
2
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
