BC807-16, -25, -40
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen-free & RoHS compliant
-500 mA, -50 V
PNP Plastic Encapsulate Transistor
FEATURES
Ideally suited for automatic insertion
Epitaxial planar die construction
Complementary to BC817 (NPN Type)
1
Base
SOT-23
3
Collector
Dim
A
B
C
D
G
Min
2.800
1.200
0.890
0.370
1.780
0.013
0.085
0.450
0.890
2.100
0.450
Max
3.040
1.400
1.110
0.500
2.040
0.100
0.177
0.600
1.020
2.500
0.600
2
Emitter
MARKING
BC807-16:5A;
BC807-25:5B;
BC807-40:5C
V
1
3
A
L
K
B S
2
H
J
J
K
C
Top View
L
S
V
G
D
H
All Dimension in mm
ABSOLUTE MAXIMUM RATINGS at Ta = 25°C
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Collector Power Dissipation
Junction, Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
, T
STG
Ratings
-50
-45
-5
-500
300
+150, -55 ~ +150
Unit
V
V
V
mA
mW
℃
CHARACTERISTICS at Ta = 25°C
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
CEO
I
EBO
V
CE(sat)
V
BE(sat)
h
FE(1)
Min.
-50
-45
-5
-
-
-
-
-
Max.
-
-
-
-0.1
-0.2
-0.1
-0.7
-1.2
250
400
600
-
Unit
V
V
V
uA
uA
uA
V
V
I
C
= -10 uA, I
E
= 0
I
C
= -10 mA, I
B
= 0
I
E
= -1 uA, I
C
= 0
V
CB
= -45V, I
E
= 0
V
CE
= -40V, I
B
= 0
V
EB
= -4V, I
C
= 0
Test Conditions
I
C
= -500mA, I
B
= -50 mA
I
C
= -500mA, I
B
= -50 mA
V
CE
= -1 V, I
C
= -100 mA
807-16
807-25
807-40
100
160
250
100
fT
MHz
V
CE
= -5 V, I
C
= -10 mA, f = 100MHz
01-June-2002 Rev. B
Page 1 of 2
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
