BC807 -16W, -25W, -40W
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
-500 mA, -50 V
PNP Plastic Encapsulate Transistor
FEATURES
SOT-323
A
L
3
3
Ideally suited for automatic insertion
Epitaxial planar die construction
Complementary to BC817W
1
Top View
2
C B
1
2
PACKAGE INFORMATION
Weight: 0.0074 g (approximately)
Collector
K
E
D
F
REF.
G
Millimeter
Min.
Max.
1.80
2.20
1.80
2.45
1.15
1.35
0.80
1.10
1.20
1.40
0.20
0.40
H
REF.
G
H
J
K
L
Millimeter
Min.
Max.
0.100 REF.
0.525 REF.
0.08
0.25
-
-
0.650 TYP.
J
MARKING
BC807-16W:
BC807-25W:
BC807-40W:
5A
5B
5C,
YL
Base
Emitter
A
B
C
D
E
F
ABSOLUTE MAXIMUM RATINGS at Ta = 25°C
PARAMETER
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Collector Power Dissipation
Junction, Storage Temperature
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
, T
STG
RATINGS
-50
-45
-5
-500
200
+150, -55 ~ +150
UNIT
V
V
V
mA
mW
℃
CHARACTERISTICS at Ta = 25°C
SYMBOL
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
CEO
I
EBO
V
CE(sat)
V
BE(on)
h
FE(1)
MIN.
-50
-45
-5
-
-
-
-
-
MAX.
-
-
-
-0.1
-0.2
-0.1
-0.7
-1.2
250
400
600
-
-
10
UNIT
V
V
V
uA
uA
uA
V
V
TEST CONDITIONS
I
C
= -10 uA, I
E
= 0
I
C
= -10 mA, I
B
= 0
I
E
= -1 uA, I
C
= 0
V
CB
= -20V, I
E
= 0
V
CE
= -20V, I
B
= 0
V
EB
= -5V, I
C
= 0
I
C
= -500mA, I
B
= -50 mA
V
CE
= -1 V, I
C
= -500 mA
V
CE
= -1 V, I
C
= -100 mA
V
CE
= -1 V, I
C
= -500 mA
807-16W
807-25W
807-40W
100
160
250
40
80
-
h
FE(2)
fT
C
OB
MHz
pF
V
CE
= -5 V, I
C
= -10 mA, f = 100MHz
V
CB
= -10V, f=1MHz
28-Jul-2010 Rev. F
Page 1 of 3
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
