BC817W
Elektronische Bauelemente
RoHS Compliant Product
NPN Transistor
Epitaxial Planar
Transistor
Description
The BC817W is designed for switching and
AF amplifier application, suitable for driver
storages and low power output storages.
Features
*
*
*
*
For General AF Appliacations
High Collector Current
High Current Gain
Low Collector-Emitter Saturation Voltage
REF.
A
A1
A2
D
E
HE
Min.
0.80
0
0.80
1.80
1.15
1.80
Millimeter
Max.
1.10
0.10
1.00
2.20
1.35
2.40
REF.
L1
L
b
c
e
Q1
Min.
Max.
0.42 REF.
0.15
0.35
0.25
0.40
0.10
0.25
0.65 REF.
0.15 BSC.
Millimeter
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CBO
V
CEO
V
EBO
Collector-Base Voltage
Ta=25
o
C
Parameter
Value
50
45
5
800
225
-55~+150
Units
V
V
V
mA
mW
O
I
C
P
D
T
J,
T
stg
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Junction and Storage Temperature
o
C
ELECTRICAL CHARACTERISTICS Tamb=25
C
unless otherwise specifie
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
Collector Saturation Voltage
Base Saturation Voltage
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Symbol
BV
CBO
BV
CEO
BV
CEO
BV
EBO
I
CES
I
EBO
*V
CE
(sat)
*V
BE
(sat)
*h
FE1
fT
C
ob
Min
50
45
50
5
-
-
-
-
100
-
-
Typ.
-
-
-
-
-
-
-
-
-
100
-
Max
-
-
-
-
Unit
V
V
V
V
nA
nA
mV
V
Test Conditions
I
C
= 100
µA
I
C
= 10mA
I
C
= 100
µA
I
E
= 100
µA
V
CE
= 25V
V
EB
=4V
I
C
=500mA,I
B
=50mA
V
CE
= 1 V, I
C
=100mA
V
CE
= 1 V, I
C
=100mA
V
CE
= 5V, I
C
= 10mA,f=100MHz
V
CB
=10V , f=1MHz,I
E
=0A
*Pulse width
≦
380
µ
s, Duty Cycle
≦
2%
100
100
700
1.2
630
-
12
MH z
pF
Classification of hFE
Rank
Range
Marking
A
100~250
8FA,6A
B
160~400
8 FB,6B
C
250~630
8FC,6C
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of 2
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
