BC817 -16, -25, -40
Elektronische Bauelemente
500 mA, 50 V
NPN Plastic Encapsulate Transistors
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
For general AF applications
High collector current
High current gain
Low collector-emitter saturation voltage
Complementary types: BC807 (PNP)
Collector
SOT-23
3
A
L
3
3
1
Base
Top View
1
2
C B
1
2
2
Emitter
K
E
D
F
REF.
A
B
C
D
E
F
G
Millimeter
Min.
Max.
2.70
3.04
2.10
2.80
1.20
1.60
0.89
1.40
1.78
2.04
0.30
0.50
H
REF.
G
H
J
K
L
Millimeter
Min.
Max.
-
0.18
0.40
0.60
0.08
0.20
0.6 REF.
0.85
1.15
J
ABSOLUTE MAXIMUM RATINGS at T
A
= 25°C
PARAMETER
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction & Storage Temperature
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
, T
STG
RATINGS
50
45
5
500
300
150, -55 ~ +150
UNIT
V
V
V
mA
mW
°
C
CHARACTERISTICS at T
A
= 25°C
PARAMETER
Collector-base Breakdown Voltage
Collector-emitter Breakdown Voltage
Emitter-base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
DC Current Gain
Collector-emitter Saturation Voltage
Base-emitter Saturation Voltage
Base-emitter Voltage
Collector Capacitance
Transition Frequency
SYMBOL
V
CBO
V
CEO
V
EBO
I
CBO
I
EBO
h
FE(1)
MIN.
50
45
5
-
-
100
40
-
-
-
-
100
TYP.
-
-
-
-
-
-
-
-
-
-
10
-
MAX.
-
-
-
0.1
0.1
600
-
0.7
1.2
1.2
-
-
UNIT
V
V
V
µA
µA
TEST CONDITIONS
I
C
= 10
µA,
I
E
= 0
I
C
= 10 mA, I
B
= 0
I
E
= 1
µA,
I
C
= 0
V
CB
= 45V, I
E
= 0
V
EB
= 4V, I
C
= 0
V
CE
= 1 V, I
C
= 100 mA
V
CE
= 1 V, I
C
= 500 mA
h
FE(2)
V
CE(sat)
V
BE(sat)
V
BE
C
ob
f
T
V
V
V
pF
MHz
I
C
= 500mA, I
B
= 50 mA
I
C
= 500mA, I
B
= 50 mA
V
CE
= 1V, I
C
= 500mA
V
CB
= 10V, f=1MHz
V
CE
= 5 V, I
C
= 10 mA,
f = 100MHz
CLASSIFICATION OF h
FE(1)
Rank
Range
Marking
BC817-16
100 - 250
6A
BC817-25
160 - 400
6B
BC817-40
250 - 600
6C
16-Nov-2009 Rev. D
Page 1 of 2
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
