BC817 -16W, -25W, -40W
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
500 mA, 50 V
NPN Plastic Encapsulate Transistor
FEATURES
SOT-323
A
L
3
3
For general AF applications
High collector current
High current gain
Low collector-emitter saturation voltage
1
Top View
2
C B
1
2
K
E
D
PACKAGE INFORMATION
Weight: 0.0074 g (approximately)
F
G
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
1.80
2.20
1.80
2.45
1.15
1.35
0.80
1.10
1.20
1.40
0.20
0.40
H
REF.
G
H
J
K
L
Millimeter
Min.
Max.
0.100 REF.
0.525 REF.
0.08
0.25
-
-
0.650 TYP.
J
Collector
MARKING
BC817-16W:
BC817-25W:
BC817-40W:
6A
6B
6C
, YM
Base
Emitter
ABSOLUTE MAXIMUM RATINGS at Ta = 25°C
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Collector Power Dissipation
Junction, Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
, T
STG
Ratings
50
45
5
500
300
-55 ~ +150
Unit
V
V
V
mA
mW
℃
CHARACTERISTICS at Ta = 25°C
Parameter
Collector-base Breakdown Voltage
Collector-emitter Breakdown Voltage
Emitter-base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
Collector-emitter Saturation Voltage
Base-emitter Saturation Voltage
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE(1)
Min.
50
45
5
-
-
-
-
Max.
-
-
-
0.1
0.1
0.7
1.2
1.2
Unit
V
V
V
uA
uA
V
V
V
Test Conditions
I
C
= 10 uA, I
E
= 0
I
C
= 10 mA, I
B
= 0
I
E
= 1 uA, I
C
= 0
V
CB
= 20V, I
E
= 0
V
EB
= 5V, I
C
= 0
I
C
= 500mA, I
B
= 50 mA
I
C
= 500mA, I
B
= 50 mA
V
CE
= 1V, I
C
= 500mA
V
CE
= 1 V, I
C
= 100 mA
V
CE
= 1 V, I
C
= 500 mA
V
CE
= 5 V, I
C
= 10 mA,
f = 100MHz
V
CB
= 10V, f=1MHz
Base-emitter Voltage
DC Current Gain
DC Current Gain
Transition Frequency
Collector Capacitance
100
40
100
-
600
-
-
5
MHz
pF
h
FE(2)
f
T
C
C
CLASSIFICATION OF h
FE(1)
Rank
Range
BC817-16W
100 - 250
BC817-25W
160 - 400
BC817-40W
250 - 600
28-Jul-2010 Rev. C
Page 1 of 2
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
