BC846S
Elektronische Bauelemente
Plastic-Encapsulate
Multi-Chip (NPN+NPN) Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Two transistors in one package
Reduces number of components and board space
No mutual interference between the transistors
A
E
6
5
4
SOT-363
L
MARKING：
：
4Ft
F
1
2
3
B
C
K
H
J
PACKAGE INFORMATION
Package
SOT-363
MPQ
3K
Leader Size
7 inch
Top View
DG
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
2.00
2.20
2.15
2.45
1.15
1.35
0.90
1.10
1.20
1.40
0.15
0.35
REF.
G
H
J
K
L
Millimeter
Min.
Max.
0.100 REF.
0.525 REF.
0.08
0.15
8°
0.650 TYP.
ABSOLUTE MAXIMUM RATINGS
(T
A
=25°C unless otherwise noted)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction & Storage Temperature
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
C
P
C
T
J
, T
STG
Value
80
65
6
0.1
200
150, -65~150
Unit
V
V
V
A
mW
°
C
ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
Parameter
Collector-Base Breakdown Voltage
Symbol
V
(BR)CBO
Min.
80
65
6
-
-
110
-
-
-
100
-
Typ.
-
-
-
-
-
-
-
-
0.77
-
-
Max.
-
-
-
15
5
-
0.1
0.3
-
-
1.5
Unit
V
Test Conditions
I
C
=10µA, I
E
=0
I
C
=10mA , I
B
=0
I
E
=10µA , I
C
=0
Collector-Emitter Breakdown Voltage V
(BR)CEO
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
http://www.SeCoSGmbH.com/
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
V
CE(sat)
V
BE(sat)
f
T
C
ob
nA
µA
V
CB
= 30V, I
E
=0
V
EB
=5V, I
C
=0
V
CE
=5V, I
C
=2mA
V
V
V
MHz
pF
I
C
=10mA, I
B
=0.5mA
I
C
=100mA, I
B
=5mA
I
C
=10mA, I
B
=0.5mA
V
CB
=5V, I
E
=10mA,
f=100MHz
V
CB
=10V, I
E
=0, f=1MHz
Any changes of specification will not be informed individually.
19-Sep-2011 Rev. A
Page 1 of 1
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
