BC847PN
Elektronische Bauelemente
RoHS Compliant Product
NPN - PNP Silicon
Multi-Chip Transistor
SOT-363
FEATURE
Epitaxial Die Construction
Two internal isolated NPN/PNP transistors in one package
Power Dissipation
P
CM
: 0.2 W (Temp. = 25˚C)
Collector Current
I
CM
: 0.1A
Collector-base Voltage
V
(BR)CBO
: 50/-50 V
Operating & Storage Junction Temperature
T
J
, T
STG
: -55˚C~+150˚C
C
1
B
2
E
2
MARKING
7P
E
1
B
1
C
2
ABSOLUTE MAXIMUM RATINGS OF TR1 at Ta = 25°C
PARAMETER
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Currrent – Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
VALUE
50
45
6
100
200
150
-55 ~ +150
UNITS
V
V
V
mA
mW
℃
℃
ELECTRICAL CHARACTERISTICS OF TR1 (NPN Transister) at Ta = 25°C
CHARACTERISTIC
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector-emitter Saturation Voltage
TEST CONDITION
I
C
=10μA, I
E
=0
I
C
= 10 mA, I
B
= 0
I
E
=1μA, I
C
=0
V
CB
=30V, I
E
=0
V
EB
=5V, I
C
=0
V
CE
=5V, I
C
=2mA
I
C
=10mA, I
B
=0.5mA
I
C
=100mA, I
B
=5mA
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
V
CE(sat)
V
BE(sat)
V
BE(sat)
V
BE(On)
V
BE(On)
C
ob
f
T
NF
MIN.
50
45
6
TYP.
MAX.
UNIT
V
V
V
15
15
200
450
0.25
0.6
0.7
0.9
0.58
0.7
0.72
6.0
100
10
nA
nA
V
V
V
V
V
V
pF
MHz
dB
Page 1 of 3
Base-Emitter Saturation Voltage
I
C
=10mA, I
B
=0.5mA
I
C
=100mA, I
B
=5mA
I
C
=10mA, V
CE
=5V
I
C
=10mA, V
CE
=5V
Base-Emitter Voltage
Collector Output Capacitance
Transition Frequency
Noise Figure
20-Oct-2009 Rev. C
V
CB
=10V, I
E
=0, f=1MHz
V
CE
=5V, I
C
=10mA, f=100MHz
V
CE
=5V, I
C
=0.2mA, f=1kHz
Rg=2KΩ,
△f=200Hz
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
