BCP53
Elektronische Bauelemente
-1A , -100V
PNP Silicon Medium Power Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Collector-Emitter Voltage:V
CEO
= -80V
Complementary types: BCP56 (NPN)
A
M
SOT-223
CLASSIFICATION OF h
FE (2)
Product-Rank
Range
BCP53-10
63~160
BCP53-16
100~250
4
Top View
CB
1
2
3
K
E
L
D
PACKAGE INFORMATION
Package
SOT-223
MPQ
2.5K
LeaderSize
13’ inch
REF.
A
B
C
D
E
F
F
G
H
J
Millimeter
Min.
Max.
6.20
6.70
6.70
7.30
3.30
3.70
1.42
1.90
4.50
4.70
0.60
0.82
REF.
G
H
J
K
L
M
Millimeter
Min.
Max.
-
0.10
-
-
0.25
0.35
-
-
2.30 REF.
2.90
3.10
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
D
T
j
Ratings
-100
-80
-5
-1
1.5
150
Unit
V
V
V
A
W
°C
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
DC current gain
1
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
h
FE
(1)
h
FE
(2)
h
FE
(3)
V
CE(sat)
V
BE(on)
f
T
Min.
-100
-80
-5
Max.
Unit
V
V
V
nA
Test Conditions
I
C
= -0.1mA , I
E
=0
I
C
= -1mA, I
B
=0
I
E
= -10μA, I
C
=0
V
CB
= -30V, I
E
=0
V
CE
= -2V, I
C
= -5mA
V
CE
= -2V, I
C
= -150mA
V
CE
= -2V, I
C
= -500mA
I
C
= -500mA, I
B
= -50mA
V
CE
= -2V, I
C
= -500mA
V
CE
= -5V, I
C
= -10mA, f=100MHZ
-100
63
63
40
250
-0.5
-1
100
Collector-emitter saturation voltage
1
Base-emitter voltage
1
Transition frequency
Note:
1.
V
V
MHz
Pulse Test: Pulse Width≦380us, Duty Cycle≦2%.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
25-Jan-2011 Rev. B
Page 1 of 2
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
