Elektronische Bauelemente
PNP Transistors
Plastic-Encapsulate Transistors
RoHS Compliant Product
BCX52
1
2
3
4.4~4.6
1.4~1.8
SOT-89
1.BASE
2.COLLECTOR
1.4~1.6
Features
Power dissipation
P
CM
:
0.5
Collector current
I
CM:
-1
Collector-base voltage
V
(BR)CBO
:
-60
3.EMITTER
3.94~4.25
W (Tamb=25
C
)
A
V
o
0.36~0.56
0.9~1.1
1.5Ref.
2.9~3.1
0.32~0.52
2.3~2.6
0.35~0.44
Dimensision in Millimeter
Operating and storage junction temperature range
T
J
, T
stg
: -55
C
to +150
o
C
ELECTRICAL CHARACTERISTICS (Tamb=25
C
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
o
o
unless otherwise specified)
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
Test
conditions
MIN
-60
-60
-5
-0.1
-0.1
MAX
UNIT
V
V
V
µA
µA
Ic=-100µA , I
E
=0
I
C
=-10mA , I
B
=0
I
E
=-10µA, I
C
=0
V
CB
=-30V, I
E
=0
V
EB
=-5V, I
C
=0
DC current gain
BCX52
BCX52-10
BCX52-16
h
FE(1)
V
CE
=-2V, I
C
=-150mA
63
63
100
63
40
250
160
250
h
FE(2)
h
FE(3)
Collector-emitter saturation voltage
Base-emitter
voltage
V
CE(sat)
V
BE(ON)
V
CE
=-2V, I
C
= -5mA
V
CE
=-2V, I
C
=-500mA
I
C
=-500 mA, I
B
=-50mA
I
C
=- 500mA, V
CE
=-2V
V
CE
= -5V, I
C
= -10mA
-0.5
-1
V
V
Transition frequency
f
T
f =
100MHz
50
MHz
DEVICE MARKING
BCX52=AE
BCX52-10=AG
BCX52-16=AM
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of
1
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
