BCX53
Elektronische Bauelemente
PNP Transistors
Plastic-Encapsulate Transistors
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
1
SOT-89
2
3
4.4~4.6
1.4~1.8
1.4~1.6
1.BASE
2.COLLECTOR
Features
3.EMITTER
3.94~4.25
2.3~2.6
Power dissipation
P
CM:
0.5
Collector current
I
CM:
-1.0
Collector-base voltage
V
(BR)CBO
:
-100.0
W (Tamb=25
o
C)
A
V
0.36~0.56
0.9~1.1
0.32~0.52
1.5Ref.
2.9~3.1
0.35~0.44
Dimensision in Millimeter
Operating and storage junction temperature range
T
J
，T
stg
: 150, -65 ~ 150 C
o
ELECTRICAL CHARACTERISTICS (Tamb=25
o
C
unless otherwise specified)
PARAMETER
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
DC current gain
h
FE(2)
h
FE(3)
Collector-emitter saturation voltage
Base-emitter
voltage
V
CE(sat)
V
BE
V
CE
=-2V, I
C
=- 150 mA
V
CE
=-2V, I
C
= -500mA
I
C
=-500 mA, I
B
=- 50mA
I
C
= -500 mA, V
CE
=-2V
V
CE
= -5V, I
C
=-10mA
63
40
-0.5
-1
V
V
250
TEST CONDITIONS
Ic=-100µA , I
E
=0
I
C
=- 1 mA , I
B
=0
I
E
=-100 µA, I
C
=0
V
CB
=-30V, I
E
=0
V
EB
=-5V, I
C
=0
V
CE
=-2V, I
C
=- 5 mA
63
MIN
-100
-80
-5
-0.1
-0.1
MAX
UNIT
V
V
V
µA
µA
Transition frequency
f
T
f =
100MHz
50
MHz
DEVICE MARKING
http://www.SeCoSGmbH.com
BCX53=AH
BCX53-10=AK
BCX53-16=AL
Any changing of specification will not be informed individual
01-Jun-2005 Rev. B
Page 1 of 2
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
