Elektronische Bauelemente
NPN Transistors
Plastic-Encapsulate Transistors
RoHS Compliant Product
BCX55
1
2
3
4.4~4.6
1.4~1.8
SOT-89
1.BASE
2.COLLECTOR
1.4~1.6
Features
Power dissipation
P
CM:
0.5
Collector current
I
CM:
1
Collector-base voltage
V
(BR)CBO
:
60
3.EMITTER
3.94~4.25
W (Tamb=25
C
)
o
0.36~0.56
0.9~1.1
A
V
1.5Ref.
2.9~3.1
0.32~0.52
2.3~2.6
0.35~0.44
Dimensision in Millimeter
Operating and storage junction temperature range
T
J
, T
stg
: -55
o
C
to +150
o
C
ELECTRICAL CHARACTERISTICS (Tamb=25
C
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
o
unless otherwise specified)
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
Test
conditions
MIN
60
60
5
0.1
0.1
MAX
UNIT
V
V
V
µA
µA
Ic=100µA, I
E
=0
I
C
= 10mA , I
B
=0
I
E
=10µA, I
C
=0
V
CB
=30V, I
E
=0
V
EB
=5 V, I
C
=0
DC current gain
BCX55
BCX55-10
BCX55-16
h
FE(1)
V
CE
=2V, I
C
= 150mA
63
63
100
40
25
250
160
250
h
FE(2)
h
FE(3)
Collector-emitter saturation voltage
Base-emitter
voltage
V
CE(sat)
V
BE(ON)
V
CE
=2V, I
C
= 5mA
V
CE
=2V, I
C
= 500mA
I
C
=500 mA, I
B
= 50mA
I
C
= 500 mA, V
CE
=2V
V
CE
= 10V, I
C
= 50mA
0.5
1
V
V
Transition frequency
f
T
f =
100MHz
130
MHz
DEVICE MARKING
http://www.SeCoSGmbH.com
BCX55=BE
BCX55-10=BG
BCX55-16=BM
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of
1
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
