BD439/BD441
Elektronische Bauelemente
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
NPN
Type
Plastic Encapsulate Transistors
TO-126
8.0
±0.2
2.0
±0.2
4.14
±0.1
11.0
±0.2
1
2
3
O2.8
±0.1
O
3.2
±0.1
Features
* Amplifier and switching applications
3.2
±0.2
1.4
±0.1
o
MAXIMUM RATINGS* T
A
=25
C
unless otherwise noted
1.27
±0.1
15.3
±0.2
0.76
±0.1
2.28 Typ.
Symbol
V
CBO
Paramete
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current –Continuous
Collector Dissipation
Junction Temperature
Storage Temperature
BD439
BD441
BD439
BD441
Value
60
80
60
80
5
4
1.25
150
-55-150
Units
V
V
V
A
W
o
V
CEO
4.55
±0.1
0.5
± 0.1
V
EBO
I
C
P
C
T
J
T
stg
1: Emitter
2: Collector
3: Base
C
C
Dimensions in Millimeters
o
ELECTRICAL CHARACTERISTICS（Tamb=25℃
Parameter
Collector-base breakdown voltage
Symbol
V
(BR)CBO
Test
unless
otherwise
specified）
MIN
TYP
MAX
UNIT
V
conditions
BD439
BD441
Ic=
100
μA,I
E
=0
60
80
60
80
5
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
Ic=
100
mA,I
B
=0
I
E
=
100
μA,I
C
=0
V
CB
=60V,I
E
=0
V
CB
=80V,I
E
=0
V
EB
=
5
V,I
E
=0
V
CE
=
1
V,I
C
=
500
mA
V
CE
=
5
V,I
C
=
10
mA
V
CE
=
1
V,I
C
=
2
A
I
C
=3A,I
B
=0.3A
V
CE
=
1
V,I
C
=
2
A
V
CE
=
1
V,I
C
=
250
mA
BD439
BD441
V
V
BD439
BD441
100
1
40
475
μA
mA
DC current gain
h
FE(2)
h
FE(3)
BD439
BD441
BD439
BD441
20
15
25
15
0.8
1.1
3
V
V
MHz
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
V
CE(sat)
V
BE
f
T
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 1 of
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SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
