BFS20
Elektronische Bauelemente
NPN Silicon
Plastic-Encapsulate Transistor
A suffix of "-C" specifies halogen & lead-free
FEATURES
High Fequency Application.
VHF Band Amplifier application
RoHS Compliant Product
Power dissipation
P
CM
: 0.25 W
3
Collector
3
1
2
1
Base
3
SOT-23
Dim
A
B
C
D
G
H
J
K
L
S
V
Min
2.800
1.200
0.890
0.370
1.780
0.013
0.085
0.450
0.890
2.100
0.450
Max
3.040
1.400
1.110
0.500
2.040
0.100
0.177
0.600
1.020
2.500
0.600
A
L
2
Emitter
Collector Current
1
Top View
2
B S
I
CM
: 25mA
Collector-base voltage
V
G
C
D
H
K
J
V
(BR)CBO
: 30 V
Operating & storage junction temperature
T
j
, T
stg
: - 55 C ~ + 150 C
O
O
All Dimension in mm
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Collector cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
h
FE
V
CE
(sat)
V
BE
(on)
unless
Test
otherwise
conditions
specified)
MIN
30
20
4
0.1
0.1
0.1
40
120
0.3
0.9
275
V
V
MHz
TYP
MAX
UNIT
V
V
V
Ic= 100
µ
A, I
E
=0
Ic= 100
µ
A, I
B
=0
I
E
=100
µ
A, I
C
=0
V
CB
=20V, I
E
=0
V
CE
=15V, I
B
=0
V
EB
=4V, I
C
=0
V
CE
=10V, I
C
= 7mA
I
C
=10 mA, I
B
=1mA
I
C
=7mA, V
CE
=10V
V
CE
= 10V, I
C
=5mA
f = 100MHz
µ
A
µ
A
µ
A
f
T
Marking
G11
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of
1
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
