CZT5551
Elektronische Bauelemente
RoHS Compliant Product
NPN
Transistor
Epitaxial Planar Transistor
SOT-223
Description
The CZT5551 is designed for general
purpose applications requiring high
breakdown voltages.
REF.
A
C
D
E
I
H
REF.
B
J
1
2
3
4
5
5
5 5
1
Min.
6.70
2.90
0.02
0C
0.60
0.25
Max.
7.30
3.10
0.10
10 C
0.80
0.35
MAXIMUM RATINGS* (T
amb
=25 C , unless otherwise specified)
Symbol
V
CBO
V
CEO
V
EBO
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Total Power Dissipation
Junction and Storage Temperature
Parameter
Value
180
160
6
600
1.5
-55~-150
o
Min.
Max.
13 T YP.
C
2.30 REF.
6.30
6.70
6.30
6.70
3.30
3.70
3.30
3.70
1.40
1.80
Units
V
V
V
mA
W
O
I
C
P
D
T
J,
T
stg
C
ELECTRICAL CHARACTERISTICS
Tamb=25 C unlessotherwise
o
specified
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Symbol
V(BR)
CBO
V(BR)
CEO
V(BR)
EBO
I
CBO
I
EBO
h
FE
h
FE
h
FE
1
2
3
MIN
180
160
6
_
_
TYP
_
_
_
_
_
_
MAX
_
_
_
UNIT
V
V
V
nA
nA
_
_
_
Test
conditions
Ic= 100u A,I
E
=0
I
C
= 1mA,I
B
=0
I
E
= 10u A,I
C
=0
V
CB
= 120V,I
E
=0
V
EB
= 4V,I
C
=0
V
CE
= 5V, I
C
= 1mA
V
CE
= 5V, I
C
= 10mA
V
CE
= 5V, I
C
= 50mA
I
C
= 10mA,I
B
= 1mA
I
C
= 50mA,I
B
= 5mA
I
C
= 10mA,I
B
= 1mA
I
C
= 50mA,I
B
= 5mA
V
CE
= 10V,I
C
= 10mA ,
f =
100MHz
50
50
_
80
80
50
_
_
_
_
160
_
_
_
_
_
_
_
400
_
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
V
CE
(sat)
1
V
CE
(sat)
2
V
BE
(sat)
1
V
BE
(sat)
2
0.15
0.2
1
1
300
6
V
V
MHz
pF
f
T
Cob
100
_
Collector output capacitance
V
CB
= 10V, f=1MHz,I
E
=0
CLASSIFICATION OF h
FE
Rank
Range
A
N
100-240
C
160-400
Any changing of specification will not be informed individual
80-200
http://www.SeCoSGmbH.com
01-Jun-2004 Rev.
B
Page 1 of 2
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
