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D882 参数 Datasheet PDF下载

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型号: D882
PDF下载: 下载PDF文件 查看货源
内容描述: 塑料封装晶体管 [Plastic Encapsulate Transistors]
分类和应用: 晶体晶体管
文件页数/大小: 2 页 / 272 K
品牌: SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
 浏览型号D882的Datasheet PDF文件第2页  
D882
Elektronische Bauelemente
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
NPN Type
Plastic Encapsulate Transistors
TO-126
8.0
±0.2
2.0
±0.2
3.2
±0.2
Features
MAXIMUM RATINGS* T
A
=25
C
unless otherwise noted
o
4.14
±0.1
11.0
±0.2
1
2
3
O2.8
±0.1
O
3.2
±0.1
1.4
±0.1
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
P
D
T
J
, T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current –Continuous
Collector Dissipation
Total Device Dissipation
Junction and Storage Temperature
Value
40
30
6
3
1.25
1.25
-55-150
Units
V
V
V
A
W
W
o
1.27
±0.1
15.3
±0.2
0.76
±0.1
2.28 Typ.
4.55
±0.1
0.5
±0.1
C
1: Emitter
2: Collector
3: Base
Dimensions in Millimeters
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
ELECTRICAL CHARACTERISTICS(Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
h
FE(2)
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
V
CE
(sat)
V
BE
(sat)
f
T
V
CE
=2V, I
C
= 100mA
I
C
=2A, I
B
= 0.2A
I
C
=2A, I
B
= 0.2A
V
CE
=5 V, I
C
=0.1mA
f = 10MHz
50
32
0.5
1.5
V
V
MHz
Symbol
V(BR)
CBO
V(BR)
CEO
V(BR)
EBO
I
CBO
I
CEO
I
EBO
h
FE(1)
unless otherwise specified)
Test
conditions
MIN
40
30
6
1
10
1
60
400
TYP
MAX
UNIT
V
V
V
uA
uA
uA
Ic=100uA ,I
E
=0
I
C
= 10 mA , I
B
=0
I
E
= 100 mA ,I
C
=0
V
CB
=40 V , I
E
=0
V
CE
=30 V , I
B
=0
V
EB
=6V ,
I
C
=0
V
CE
= 2V, I
C
= 1A
CLASSIFICATION OF hFE
(1)
Rank
Range
R
60-120
O
100-200
Y
160-320
GR
200-400
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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