MMBD1501A~ MMBD1505A
Elektronische Bauelemente
Plastic-Encapsulated Diode
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
SOT-23
A
FEATURES
L
3
3
High conductance Low Leakage Diode
1
Top View
2
C B
1
2
K
E
D
MARKING
Part
Name
Marking
MMBD1501A
A11
MMBD1503A
A13
MMBD1504A
A14
MMBD1505A
A15
F
G
H
J
REF.
A
B
C
D
E
F
Circuit
Millimeter
Min.
Max.
2.70
3.04
2.10
2.80
1.20
1.60
0.89
1.40
1.78
2.04
0.30
0.50
REF.
G
H
J
K
L
Millimeter
Min.
Max.
-
0.18
0.40
0.60
0.08
0.20
0.6 REF.
0.85
1.15
ABSOLUTE MAXIMUM RATINGS
(@ Ta = 25°C)
PARAMETER
Working Inverse Voltage
DC Forward Current
Average Rectifying Current
Total Device Dissipation
Thermal Resistance, Junction to Ambient
Surge Current
Junction, Storage Temperature
1s
1 microsecond
SYMBOL
V
R
I
F
I
O
P
D
R
θJA
I
SURGE
T
J
, T
STG
LIMITS
200
600
200
350
357
1
2
150, -55~150
UNIT
V
mA
mA
mW
°C/W
A
A
°C
ELECTRICAL CHARACTERISTICS
(at Tamb = 25°C unless otherwise specified)
Parameters
Reverse Breakdown Voltage
Reverse voltage leakage current
Symbol
V
(BR)
I
R
V
F1
V
F2
V
F3
V
F4
V
F5
V
F6
C
D
Min.
200
-
-
-
-
-
-
-
-
Max.
-
10
0.75
0.85
0.95
1.1
1.3
1.5
4
Unit
V
nA
V
V
V
V
V
V
pF
Test Conditions
I
R
=5µA
V
R
=180V
I
F
= 1 mA
I
F
= 10 mA
I
F
= 50 mA
I
F
= 100 mA
I
F
= 200 mA
I
F
= 300 mA
V
R
= 0, f = 1 MHz
Forward Voltage
Diode Capacitance
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
30-Nov-2010 Rev. B
Page 1 of 2
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
