MMBT4403
Elektronische Bauelemente
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
PNP Silicon
Switching Transistor
SOT-23
Dim
COLLECTOR
Min
2.800
1.200
0.890
0.370
1.780
0.013
0.085
0.450
0.890
2.100
0.450
Max
3.040
1.400
1.110
0.500
2.040
0.100
0.177
0.600
1.020
2.500
0.600
A
L
3
A
B
C
2
3
1
BASE
1
Top View
B S
D
G
H
J
K
L
K
J
3
2
EMITTER
V
1
2
G
C
D
H
S
V
All Dimension in mm
MAXIMUM RATINGS* T
A
=25
℃
unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
, T
stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction and Storage Temperature
Parameter
Value
-40
-40
-5
-0.6
0.3
-55-150
Units
V
V
V
A
W
℃
ELECTRICAL CHARACTERISTICS（Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
unless
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
otherwise
Test
specified）
MIN
-40
-40
-5
-0.1
-0.1
-0.1
100
300
-0.4
-0.95
200
V
V
MHz
MAX
UNIT
V
V
V
μA
μA
μA
conditions
I
E
=0
I
B
=0
I
C
=0
I
E
=0
Ic=-100μA ,
I
C
= -1mA ,
I
E
=-100μA,
V
CB
=-35V ,
V
CE
=-35 V , I
B
=0
V
EB
=-4V ,
V
CE
=-2 V,
I
C
=0
I
C
= -150mA
I
C
=-150 mA, I
B
=-15mA
I
C
=- 150 mA, I
B
=-15mA
V
CE
= -10V, I
C
= -20mA
f
T
f =
100MHz
MARKING: 2T
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
01-Jun-2004 Rev.
B
Page 1 of
4
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
