MMBT4401
Elektronische Bauelemente
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
NPN Silicon
Switching Transistor
COLLECTOR
A
L
3
3
3
1
BASE
SOT-23
Dim
A
1
2
Min
2.800
1.200
0.890
0.370
1.780
0.013
0.085
0.450
0.890
2.100
0.450
Max
3.040
1.400
1.110
0.500
2.040
0.100
0.177
0.600
1.020
2.500
0.600
1
Top View
2
B S
B
C
D
G
H
J
2
EMITTER
V
G
C
D
H
K
J
K
L
S
V
MAXIMUM RATINGS
Rating
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Symbol
V
CEO
V
CBO
V
EBO
I
C
Symbol
PD
Value
40
60
6.0
600
Unit
Vdc
Vdc
Vdc
mAdc
All Dimension in mm
THE RMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board(1)
TA = 25°C
Derate above 25°C
T hermal R es is tance, J unction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Max
300
1.8
RθJA
PD
556
300
2.4
RθJA
T J , Ts tg
417
-55 to +150
Unit
mW
mW/
C
o
o
C/W
mW
mW/
C
o
o
C/W
o
C
DEVICE MARKING
MMBT4401
= 2X
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(3)
(IC = 1.0 mAdc, IB = 0)
Collector – Base Breakdown Voltage
(IC = 0.1 mAdc, IE = 0)
Emitter – Base Breakdown Voltage
(IE = 0.1 mAdc, IC = 0)
Base Cutoff Current
(VCE = 35 Vdc, VEB = 0.4 Vdc)
Collector Cutoff Current
(VCE = 35 Vdc, VEB = 0.4 Vdc)
1. FR±5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width =< 300
µs,
Duty Cycle =< 2.0%.
http://www.SeCoSGmbH.com
V
(BR)CEO
V
(B R)CBO
V
(BR)EBO
I
BEV
I
CEX
Vdc
40
60
6.0
—
—
—
Vdc
—
Vdc
—
0.1
0.1
µAdc
µAdc
Any changing of specification will not be informed individual
01-Jun-2004 Rev.
B
Page 1 of
5
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
