MMBT5401
Elektronische Bauelemente
PNP Silicon
General PurposeTransistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Ideal for medium power amplification and switching
1
SOT-23
A
L
3
3
Top View
C B
1
2
2
MARKING
2L
K
E
D
F
G
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
2.80
3.00
2.25
2.55
1.20
1.40
0.90
1.15
1.80
2.00
0.30
0.50
H
J
Millimeter
Min.
Max.
0.10 REF.
0.55 REF.
0.08
0.15
0.5 REF.
0.95 TYP.
ABSOLUTE MAXIMUM RATINGS
Parameter
Collector to Emitter Voltage
Collector to Base Voltage
Emitter to Base Voltage
Collector Current - Continuous
Symbol Ratings
V
CEO
V
CBO
V
EBO
I
C
-150
-160
-5.0
-500
Unit
V
V
V
mA
REF.
G
H
J
K
L
THERMAL CHARACTERISTICS
Parameter
Total Power Dissipation
Thermal Resistance, Junction to Ambient
Total Power Dissipation
Thermal Resistance, Junction to Ambient
Junction, Storage Temperature
Alumina Substrate, T
A
= 25°C
Derate above 25°C
(2)
Symbol
T
A
= 25°C
Derate above 25°C
P
D
R
θJA
P
D
R
θJA
T
J
, T
STG
Ratings
225
1.8
556
300
2.4
417
-55 ~ +150
Unit
mW
mW /
℃
℃
/W
mW
mW /
℃
℃
/W
℃
ELECTRICAL CHARACTERISTICS
Test Conditions
Off Characteristics
Collector–Emitter Breakdown Voltage
Collector–Base Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector Cutoff Current
On Characteristics
DC Current Gain
(T
A
= 25°C unless otherwise noted)
Symbol
I
C
= -1.0 mA, I
B
= 0
I
C
= -100
μA,
I
E
= 0
I
E
= -10
μA,
I
C
= 0
BV
CEO
BV
CBO
BV
EBO
I
CES
Min.
-150
-160
-5.0
-
Max.
-
-
-
-100
-100
-
200
-
-0.2
-0.5
-1.0
-1.0
Unit
V
V
V
nA
μA
V
CB
= -120 V, I
E
= 0
V
CB
= -120 V, I
E
= 0, T
A
= 100°C
I
C
= –1.0 mA, V
CE
= –5.0 V
I
C
= –10 mA, V
CE
= –5.0 V
I
C
= –50 mA, V
CE
= –5.0 V
I
C
= –10 mA, I
B
= –1.0 mA
I
C
= –50 mA, I
B
= –5.0 mA
I
C
= –10 mA, I
B
= –1.0 mA
I
C
= –50 mA, I
B
= –5.0 mA
h
FE
80
100
50
-
-
-
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
Small Signal Characteristics
Current-Gain - Bandwidth Product
Output Capacitance
Small Signal Current Gain
Noise Figure
V
CE(sat)
V
BE(sat)
V
V
I
C
=-10 mA, V
CE
= -10 V, f = 100 MHz
V
CB
= -10 V, I
E
= 0, f = 1.0 MHz
I
C
= -1.0 mA, V
CE
=-10 V, f = 1.0 kHz
f
T
C
OBO
h
FE
NF
Note:
100
-
50
-
-
6.0
200
8.0
MHz
pF
-
dB
I
C
= –200
μA,
V
CE
= –5.0 V, R
S
= 10
Ω,
f = 1.0 kHz
1. FR-5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
01-June-2002 Rev. A
Page 1 of 3
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
