MMBTA92
Elektronische Bauelemente
RoHS Compliant Product
General Purpose Transistor
PNP Silicon
FEATURES
Pb-free is available.
Power dissipation & Collector current
Pcm: 0.3W Icm: -0.3A
High voltage V
(BR)
: -300V
A suffix of "-C" specifies halogen & lead-free
SOT-23
Dim
A
B
C
Min
2.800
1.200
0.890
0.370
1.780
0.013
0.085
0.450
0.890
2.100
0.450
Max
3.040
1.400
1.110
0.500
2.040
0.100
0.177
0.600
1.020
2.500
0.600
A
L
3
D
G
2
COLLECTOR
3
1
BASE
3
1
2
Top View
1
B S
H
J
K
L
S
V
K
J
V
G
C
D
H
2
EMITTER
All Dimension in mm
ELECTRICAL CHARACTERISTICS
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Tamb=25 C
unless
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
H
FE
（
1
）
otherwise
Test
specified
MIN
-300
-300
-5
-0.25
-0.1
60
100
60
-0.2
-0.9
V
V
200
MAX
UNIT
V
V
V
conditions
I
E
=0
I
B
=0
Ic= -100uA，
Ic= -1 mA，
I
E
= -100 A， I
C
=0
V
CB
=-200 V , I
E
=0
V
EB
= -5V ,
I
C
=0
μ
A
μ
A
V
CE
= -10V, I
C
= - 1mA
V
CE
= -10V, I
C
=-10mA
V
CE
=-10V, I
C
=-30mA
I
C
=-20 mA, I
B
= -2mA
I
C
= -20 m A, I
B
=-2mA
V
CE
=-20V, I
C
=-10mA
DC current gain
H
FE
（
2
）
H
FE
（
3
）
Collector-emitter saturation voltage
Base-emitter saturation voltage
V
CE
(sat)
V
BE
(sat)
Transition frequency
f
T
f=
30MHz
50
MHz
DEVICE
MARKING
DEVICE
MARKING
MMBTA92=2D
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
01-Jun-2004 Rev.B
Page 1 of 2
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
