MMBTA43
Elektronische Bauelemente
0.5A , 200V
NPN Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
High Voltage Application
Telephone Application
Complementary to MMBTA93
A
L
3
SOT-23
3
Top View
C B
1
2
2
MARKING
ABX
PACKAGE INFORMATION
Package
SOT-23
MPQ
3K
Leader Size
Collector
1
K
E
D
F
G
Millimeter
Min.
Max.
2.80
3.04
2.10
2.55
1.20
1.40
0.89
1.15
1.78
2.04
0.30
0.50
H
J
7 inch
1
Base
3
REF.
A
B
C
D
E
F
REF.
G
H
J
K
L
Millimeter
Min.
Max.
0.09
0.18
0.45
0.60
0.08
0.177
0.6 REF.
0.89
1.02
2
Emitter
ABSOLUTE MAXIMUM RATINGS
(T
A
=25°C unless otherwise specified)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction, Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
T
J
, T
STG
Ratings
200
200
5
500
350
357
150, -55~150
Unit
V
V
V
mA
mW
° /W
C
°
C
ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise specified)
Parameter
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
DC Current Gain
Collector to Emitter Saturation Voltage
Base to Emitter Saturation Voltage
Transition Frequency
Collector output capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
1
h
FE(1)
1
h
FE(2)
1
h
FE(3)
1
V
CE(sat)
1
V
BE(sat)
f
T
C
ob
Min.
200
200
5
40
40
40
-
-
50
-
Typ.
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
-
-
-
0.5
0.9
-
4
Unit
V
V
V
Test Conditions
I
C
=100µA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=100µA, I
C
=0
V
CE
=10V, I
C
=10mA
V
CE
=10V, I
C
=1mA
V
CE
=10V, I
C
=30mA
I
C
=20mA, I
B
=2mA
I
C
=20mA, I
B
=2mA
V
CE
=20V, I
E
=10mA, f=100MHz
V
CB
=20V, I
E
=0, f=1MHz
V
V
MHz
pF
Note:
1. Pulse test: pulse width
≦
300µs, duty cycle
≦
2.0%
.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
15-Jul-2011 Rev. A
Page 1 of 1
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
