MMBTA13
MMBTA14
Elektronische Bauelemente
Darlington Amplifier Transistor NPN Silicon
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
A
COLLECTOR 3
3
3
SOT-23
Dim
Min
2.800
1.200
0.890
0.370
1.780
0.013
0.085
0.450
0.890
2.100
0.450
Max
3.040
1.400
1.110
0.500
2.040
0.100
0.177
0.600
1.020
2.500
0.600
A
B
C
D
G
H
J
K
J
L
BASE 1
1
2
1
2
B S
V
EMITTER 2
G
C
H
K
FEATURES
Power dissipation
P
CM
:
0.3W（Tamb=25℃）
Collector current
I
CM
:
0.3A
Collector-base voltage
V
(BR)CBO
: 30V
Operating and storage junction temperature range
T
J
，T
stg
: -55℃ to +150
D
L
S
V
All Dimension in mm
ELECTRICAL CHARACTERISTICS（Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector-emitter breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
*
DC current gain
h
FE(2)
*
Collector-emitter saturation voltage
Base-emitter voltage
V
CE (sat)
*
V
BE
*
unless
Test
otherwise
specified）
MIN
30
30
10
0.1
0.1
MAX
UNIT
V
V
V
conditions
I
E
=0
Ic= 100
μ
A，
Ic= 100uA， I
B
=0
I
E
= 100
μ
A， I
c
=0
V
CB
=30 V , I
E
=0
V
EB
= 10V ,
I
C
=0
MMBTA13
MMBTA14
V
CE
=5V, I
C
= 100mA
MMBTA13
MMBTA14
I
C
=100 mA, I
B
=0.1mA
V
CE
=5V,I
C
= 100mA
V
CE
=5V,
I
C
= 10mA
μ
A
μ
A
V
CE
=5V, I
C
= 10mA
5000
10000
10000
20000
1.5
2.0
125
V
V
MHz
Transition frequency
f
T
f=
100MHz
*
Pulse Test : pulse width≤300μs，duty
cycle≤2%。
Marking : MMBTA13:K2D；MMBTA14：K3D
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
01-Jun-2004 Rev.
B
Page 1 of
3
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
