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MMBTA06 参数 Datasheet PDF下载

MMBTA06图片预览
型号: MMBTA06
PDF下载: 下载PDF文件 查看货源
内容描述: 塑料封装晶体管 [Plastic-Encapsulate Transistor]
分类和应用: 晶体晶体管光电二极管
文件页数/大小: 2 页 / 470 K
品牌: SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
 浏览型号MMBTA06的Datasheet PDF文件第2页  
MMBTA06
Elektronische Bauelemente
RoHS Compliant Product
Plastic-Encapsulate Transistor
Features
• NPN Silicon Epitaxial Planar Transistor for
switching and amplifier applications.
A suffix of "-C" specifies halogen & lead-free
3.Collector
SOT-23
Dim
Min
2.800
1.200
0.890
0.370
1.780
0.013
0.085
0.450
0.890
2.100
0.450
Max
3.040
1.400
1.110
0.500
2.040
0.100
0.177
0.600
1.020
2.500
0.600
• As complementary type, the PNP tranistor MMBTA56 is
recommended.
• This transistor is also available in the TO-92 case with the
type designation MPSA06.
A
L
B S
1. Base
2. Emitter
A
B
C
D
G
H
J
K
Mechanical Data
Case:
SOT-23 Plastic Package
Weight:
approx. 0.008g
Marking Code:
1GM
V
1
Top View
2
3
G
C
D
H
K
J
L
S
V
All Dimension in mm
Maximum Ratings and Thermal Characteristics
Parameter
Collector Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation at T
A
= 25°C
Thermal Resistance Junction to Ambiant Air
Junction Temperature
Storage Temperature Range
Notes:
Device on alumina substrate.
(T
A
= 25°C unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
R
θJA
T
j
T
S
Value
80
80
4.0
500
277
(1)
300
(2)
450
(1)
150
–65 to +150
Unit
V
V
V
mA
mW
°C/W
°C
°C
Electrical Characteristics
(T
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Cutoff Current
Collector-Base Cutoff Current
Collector Saturation Voltage
Base-Emitter On Voltage
DC Current Gain
Gain-Bandwidth Product
J
= 25°C unless otherwise noted)
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CES
I
CBO
V
CEsat
V
BE(on)
h
FE
f
T
Test Condition
I
C
= 100µA, I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 100µA, I
C
= 0
V
CE
= 60V, I
B
= 0
V
CB
= 80V, I
E
= 0
I
C
= 100mA, I
B
= 10mA
I
C
= 100mA, V
CE
= 1V
V
CE
= 1V, I
C
= 10mA
V
CE
= 1V, I
C
= 100mA
V
CE
= 2V, I
C
= 10mA
f = 100MHz
Min
80
80
4.0
100
100
100
Typ
Max
100
100
0.25
1.2
Unit
V
V
V
nA
nA
V
V
MHz
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
01-Jun-2004 Rev.
B
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