MPSA06
Elektronische Bauelemente
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
NPN
Plastic-Encapsulate Transistor
FEATURES
*Low current (max. 500 mA)
*Low voltage (max. 80 V).
APPLICATIONS
14.3
±0.2
4.55
±0.2
4.5
±0.2
TO-92
3.5
±0.2
(1.27 Typ.)
1.25
±0.2
1 2 3
2.54
±0.1
*General purpose switching and amplification.
DESCRIPTION
NPN transistor in a TO-92; plastic package.
PNP complement: MPSA56.
1: Emitter
2: Base
3: Collector
0.43
+0.08
0.46
±0.1
–0.07
Symbol
P
CM
I
CM
V
(BR)CBO
Power Dissipation
Collector Current
Parameter
Value
0.625
0.5
80
-55~+150
150
o
Units
W
A
V
O
Collector-Base Voltage
Storage Temperature
Junction Temperature
T
stg
T
J
C
C
O
ELECTRICAL CHARACTERISTICS (Tamb=25
C
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
unless
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
H
FE(1)
V
CE(sat)
V
BE(sat)
otherwise
Test
specified)
MIN
80
80
4
0.1
0.1
0.1
100
200
0.25
1.2
V
V
MAX
UNIT
V
V
V
µA
µA
µA
conditions
Ic=100µA, I
E
=0
I
C
= 1mA , I
B
=0
I
E
=100µA, I
C
=0
V
CB
=60V, I
E
=0
V
CE
=60V, I
B
=0
V
EB
=3V, I
C
=0
V
CE
=1V, I
C
= 100mA
I
C
=100 mA, I
B
=10mA
I
C
= 100 mA, I
B
=10mA
V
CE
= 2 V, I
C
= 10mA
f =
100MHz
Transition frequency
f
T
100
MHz
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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