PZT2222A
Elektronische Bauelemente
RoHS Compliant Product
NPN Silicon
General Purpose Transistor
SOT-223
C
1.
BASE
COLLECTOR
EMITTER
FEATURES
E
2.
3.
Power dissipation
P
CM
: 1 W Tamb=25
B
C
Collector current
I
CM
: 0.6 A
Collector-base voltage
V
(BR)CBO
: 75 V
Operating and storage junction temperature range
T
J
T
stg
: -55 to +150
ELECTRICAL CHARACTERISTICS
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
1
unless
Test
Ic= 10
A
2
3
Unit : mm
Tamb=25
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
h
FE(2)
otherwise
I
E
=0
I
B
=0
I
C
=0
I
E
=0
I
C
=0
I
C
= 0.1mA
I
C
= 1mA
I
C
= 10mA
I
C
= 150mA
specified
MIN
75
40
6
0. 01
0. 01
35
50
75
100
50
40
1
0.3
2.0
0.6
300
1.2
V
V
V
V
MHz
300
MAX
UNIT
V
V
V
A
A
conditions
Ic= 10mA
I
E
=10
A
V
CB
=60V ,
V
EB
= 3V ,
V
CE
=10V,
V
CE
=10V,
V
CE
=10V,
V
CE
=10V,
V
CE
=1V,
V
CE
=10V,
DC current gain
h
FE(3)
h
FE(4)
h
FE(5)
h
FE(6)
I
C
= 150mA
I
C
= 500mA
Collector-emitter saturation voltage
V
CE
(sat)
V
CE
(sat)
I
C
=500 mA, I
B
= 50mA
I
C
=150 mA, I
B
= 15mA
I
C
=500 mA, I
B
= 50mA
I
C
=150 mA, I
B
=15mA
V
CE
=20V,
I
C
= 20mA
Base-emitter saturation voltage
V
BE
(sat)
V
BE
(sat)
Transition frequency
f
T
C
ob
t
d
t
r
t
S
t
f
f=
100MHz
V
CB
=10V,
I
E
= 0
Output Capacitance
Delay time
Rise time
Storage time
Fall time
http://www.SeCoSGmbH.com
f=
1MHz
V
CC
=30V, I
C
=150mA
V
BE(off)
=0.5V,I
B1
=15mA
V
CC
=30V, I
C
=150mA
I
B1
= I
B2
= 15mA
8
10
25
225
60
pF
nS
nS
nS
nS
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of 4
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
