PZTA44
Elektronische Bauelemente
300mA, 400V
NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR
SOT-223
C
.
RoHS Compliant Product
.
Low Current
.
High Voltage
I
CM
: 300 mA (Max.)
V
CEO
: 400 V
1.
2.
3.
FEATURES
E
B
C
BASE
COLLECTOR
EMITTER
1
2
3
MAXIMUM RATINGS ( T
A
= 25
TYPE NUMBER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Transition Frequency
Junction and Storage Temperature
unless otherwise noted )
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
, T
STG
VALUE
500
400
6
300
1000
-55 ~ +150
UNIT
V
V
V
mA
mW
ELECTRICAL CHARACTERISTICS ( Tamb = 25
TYPE NUMBER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
h
FE(2)
DC Current Gain
h
FE(3)
h
FE(4)
V
CE(SAT)
Collector-Emitter Saturation Voltage
V
CE(SAT)
V
CE(SAT)
Base-Emitter Saturation Voltage
Transition Frequency
Collector Capacitance
Emitter Capacitance
V
BE(SAT)
f
T
C
c
C
e
I
C
= 100 μA, I
E
= 0
I
C
= 1 mA, I
B
= 0
I
E
= 100 μA, I
C
= 0
V
CB
= 400 V, I
E
= 0
V
EB
= 4 V, I
C
= 0
unless otherwise specified )
MIN.
500
400
6
0.1
0.1
40
50
45
40
0.4
0.5
0.75
0.85
20
7
180
V
V
V
V
MH
Z
pF
pF
300
TYP.
MAX.
UNIT
V
V
V
μA
μA
TEST CONDITIONS
V
CE
= 10 V, I
C
= 1 mA
V
CE
= 10 V, I
C
= 10 mA
V
CE
= 10 V, I
C
= 50 mA
V
CE
= 10 V, I
C
= 100 mA
I
C
= 1 mA, I
B
= 0.1 mA
I
C
= 10 mA, I
B
= 1 mA
I
C
= 50 mA, I
B
= 5 mA
I
C
= 10 mA, I
B
= 1 mA
V
CE
= 10 V, I
C
= 10 mA, f = 100 MH
Z
V
CB
= 20 V, I
E
= 0, f = 1MH
Z
V
EB
= 0.5 V, I
C
= 0, f = 1MH
Z
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 1 of 1
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
