S8550
PNP Silicon
Elektronische Bauelemente
RoHS Compliant Product
Plastic-Encapsulate Transistors
FEATURES
Complimentary to S8050
Collector Current: IC=0.5A
A suffix of "-C" specifies halogen & lead-free
SOT-23
3
Collector
Base
Dim
A
B
C
D
G
H
J
K
L
S
V
Min
2.800
1.200
0.890
0.370
1.780
0.013
0.085
0.450
0.890
2.100
0.450
Max
3.040
1.400
1.110
0.500
2.040
0.100
0.177
0.600
1.020
2.500
0.600
1
2
Emitter
A
L
3
Top View
1
2
B S
MARKING: 2TY
V
G
C
D
H
K
J
All Dimension in mm
MAXIMUM RATINGS (T
A
=25 C unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction Temperature
Storage Temperature
Parameter
Value
-40
-25
-5
-0.5
0.3
150
-55-150
Units
V
V
V
A
W
℃
℃
O
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
H
FE(2)
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
http://www.SeCoSGmbH.com
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
H
FE(1)
Test
conditions
MIN
-40
-25
-5
TYP
MAX
UNIT
V
V
V
I
C
= -100
μ
A, I
E
=0
I
C
=-1mA, I
B
=0
I
E
=-100
μ
A, I
C
=0
V
CB
=-40 V ,
V
CB
=-20V ,
V
EB
= -3V ,
V
CE
=-1V,
V
CE
=-1V,
I
E
=0
I
E
=0
I
C
=0
I
C
= -50mA
I
C
= -500mA
-0.1
-0.1
-0.1
120
50
-0.6
-1.2
150
350
μ
A
μ
A
μ
A
V
CE
(sat)
V
BE
(sat)
f
T
I
C
=-500 mA, I
B
= -50mA
I
C
=-500 mA, I
B
= -50mA
V
CE
=-6V,
I
C
=
-20mA
V
V
MHz
f=
30MHz
Any changing of specification will not be informed individual
01-Jun-2007 Rev. A
Page 1 of
2
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
