Elektronische Bauelemente
RoHS Compliant Product
NPN Silicon
General Purpose Transistor
S9013
A suffix of "-C" specifies halogen & lead-free
FEATURES
3
SOT-23
Collector
3
1
Base
Dim
A
B
C
D
G
H
J
K
L
S
V
Min
2.800
1.200
0.890
0.370
1.780
0.013
0.085
0.450
0.890
2.100
0.450
Max
3.040
1.400
1.110
0.500
2.040
0.100
0.177
0.600
1.020
2.500
0.600
Power dissipation
P
CM
: 0.3 W
Collector Current
I
CM
: 0.5 A
Collector-base voltage
1
2
A
L
3
2
Emitter
V
(BR)CBO
: 40 V
Operating & storage junction temperature
T
j
, T
stg
: - 55 C ~ + 150 C
O
O
Top View
1
2
B S
V
G
C
D
H
K
J
All Dimension in mm
ELECTRICAL CHARACTERISTICS ( Tamp.=25 C unless otherwise specified)
O
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
H
FE(1)
Test
conditions
I
E
=0
MIN
40
25
5
TYP
MAX
UNIT
V
V
V
Ic= 100
μ
A，
Ic= 0.1mA， I
B
=0
I
E
=100
μ
A， I
C
=0
V
CB
=40 V , I
E
=0
V
CE
=20V , I
B
=0
V
EB
= 5V ,
I
C
=0
0.1
0.1
0.1
120
40
0.6
1.2
350
μ
A
μ
A
μ
A
V
CE
=1V, I
C
= 50m A
V
CE
=1V, I
C
=500mA
I
C
=500 mA, I
B
= 50m A
I
C
=500 mA, I
B
= 50m A
V
CE
=6V,
I = 20mA
C
DC current gain
H
FE(2)
Collector-emitter saturation voltage
Base-emitter saturation voltage
V
CE
(sat)
V
BE
(sat)
V
V
Transition frequency
f
T
f=
30MHz
150
MHz
CLASSIFICATION OF h
FE(1)
Ｌ
１２０－２００
Ｈ
２００－３５０
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
01-Jun-2005 Rev.B
Page 1 of 1
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
