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S9018 参数 Datasheet PDF下载

S9018图片预览
型号: S9018
PDF下载: 下载PDF文件 查看货源
内容描述: 通用晶体管 [General Purpose Transistor]
分类和应用: 晶体晶体管
文件页数/大小: 1 页 / 210 K
品牌: SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
   
Elektronische Bauelemente
RoHS Compliant Product
NPN Silicon
General Purpose Transistor
S9018
A suffix of "-C" specifies halogen & lead-free
FEATURES
3
SOT-23
Collector
3
1
Dim
A
B
C
D
Min
2.800
1.200
0.890
0.370
1.780
0.013
0.085
0.450
0.890
2.100
0.450
Max
3.040
1.400
1.110
0.500
2.040
0.100
0.177
0.600
1.020
2.500
0.600
Power dissipation
P
CM
: 0.2 W
Collector Current
I
CM
: 0.05 A
Collector-base voltage
1
2
Base
A
L
3
2
Emitter
G
H
J
K
L
S
V
V
(BR)CBO
: 25 V
Operating & storage junction temperature
T
j
, T
stg
: - 55 C ~ + 150 C
O
O
Top View
1
2
B S
V
G
C
D
H
K
J
All Dimension in mm
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
h
FE(1)
V
CE
(sat)
V
BE
(sat)
unless otherwise specified)
Test
conditions
MIN
25
18
4
0.1
0.1
0.1
70
190
0.5
1.4
V
V
TYP
MAX
UNIT
V
V
V
Ic= 100
µ
A, I
E
=0
Ic= 0.1mA, I
B
=0
I
E
=100
µ
A, I
C
=0
V
CB
=20V, I
E
=0
V
CE
=15V, I
B
=0
V
EB
= 3V, I
C
=0
V
CE
=5V, I
C
= 1mA
I
C
=10mA, I
B
= 1mA
I
C
=10mA, I
B
= 1mA
V
CE
=5V, I
C
= 5mA
µ
A
µ
A
µ
A
Transition frequency
f
T
f=
400MHz
600
MHz
DEVICE MARKING
S9018 = J8
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
01-Jun-2004 Rev.
B
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