SD101AW/SD101BW/SD101CW
Elektronische Bauelemente
Voltage: 40V~60V
Plastic-Encapsulate Schottky Diodes
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
SOD-123
D
1
FEATURES
Low Forward Voltage Drop
Guard Ring Construction for Transient Protection
H
Cathode Band
G
2
F
Negligible Reverse Recovery Time
C
B
A
E
J
REF.
MARKING : SD101AW: S1
SD101BW: S2
SD101CW: S3
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS at T
A
= 25°
C
PARAMETER
Peak Repetitive Peak Reverse voltage
Working Peak
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current
Repetitive Peak Forward
@t＜1.0S
Current
@t=10µS
Power Dissipation
Thermal Resistance Junction to Ambient
Storage Temperature
A
B
C
D
E
Millimeter
Min.
Max.
0.95
1.35
0.10 REF.
1.05
1.15
0.30
0.78
0.08
0.25
REF.
F
G
H
J
Millimeter
Min.
Max.
1.40
1.80
2.55
2.85
3.55
3.85
-
-
SYMBOL
V
RM
V
RWM
V
R
V
R(RMS)
I
FM
I
FRM
P
D
R
θJA
T
STG
SD101AW SD101BW SD101CW
60
60
60
42
50
50
50
35
15
50
2.0
400
300
-65~125
40
40
40
28
UNIT
V
V
V
V
mA
mA
A
mW
°
C/W
°
C
ELECTRICAL RATING at T
A
= 25°
C
PARAMETERS
Reverse Breakdown Voltage
SD101AW
SD101BW
SD101CW
SD101AW
SD101BW
SD101CW
SD101AW
SD101BW
SD101CW
SD101AW
SD101BW
SD101CW
SD101AW
SD101BW
SD101CW
SYMBOL
V
(BR)R
MIN.
60
50
40
MAX.
UNIT
V
TEST CONDITIONS
I
R
= 10µA
Forward Voltage
V
F1
Forward Voltage
V
F2
Reverse Current
I
RM
Capacitance between Terminals
Reverse Recovery Time
C
T
T
rr
0.41
0.40
0.39
1.00
0.95
0.90
0.2
0.2
0.2
2.0
2.1
2.2
1.0
mV
I
F
=1.0mA
I
F
=15mA
µA
V
R
= 50V
V
R
= 40V
V
R
= 30V
V
R
=0V, f=1.0MHz
I
F
= I
R
=5mA,
I
rr
=0.1XI
R,
R
L
=100
pF
ns
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
10-Nov-2009 Rev. A
Page 1 of 2
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
