SS8550
Elektronische Bauelemente
PNP Silicon
General Purpose Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
Collector
FEATURES
Power dissipation
1
Base
P
CM
: 0.3 W
Collector Current
I
CM
: - 1.5 A
Collector-base voltage
V
(BR)CBO
: - 40 V
Operating & storage junction temperature
T
J
, T
STG
: - 55°C ~ + 150°C
3
SOT-23
3
Collector
1
Base
Dim
A
B
C
D
G
Min
2.800
1.200
0.890
0.370
1.780
0.013
0.085
0.450
0.890
2.100
0.450
Max
3.040
1.400
1.110
0.500
2.040
0.100
0.177
0.600
1.020
2.500
0.600
2
Emitter
2
Emitter
A
L
3
H
K
B S
2
J
J
K
C
Top View
1
L
S
V
V
G
D
H
All Dimension in mm
ELECTRICAL CHARACTERISTICS at Ta = 25°C
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
CEO
I
EBO
V
CE(sat)
V
BE(sat)1
*h
FE
1
*h
FE
2
f
T
C
OB
Min.
-40
-25
-5
-
-
-
-
-
120
40
100
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
-0.1
-0.1
-0.1
0.5
1.2
350
-
-
20
Unit
V
V
V
μA
μA
μA
V
V
-
-
MHz
pF
Ic = 100μA, I
E
= 0
Ic = -0.1mA, I
B
= 0
Test Conditions
I
E
= -100μA, I
C
= 0
V
CB
= -40 V, I
E
= 0
V
CE
= -20V, I
B
= 0
V
EB
= -5V, I
C
= 0
I
C
= -800 mA, I
B
= -80mA
I
C
= -800 mA, I
B
= -80mA
V
CE
= -1V, I
C
=-100mA
V
CE
= -1V, I
C
= -800mA
V
CE
= -10V, I
C
= -50mA, f = 30MHz
V
CB
= -10V, I
E
=0, f=1MHz
CLASSIFICATION OF h
FE(1)
Rank
Range
Marking
L
120 - 200
H
200-350
Y2
J
300-400
01-June-2005 Rev. B
Page 1 of 2
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
