UMD3N
Elektronische Bauelemente
NPN-PNP built-in resistors
Multi-Chip Digital Transistor
SOT-363
.055(1.40)
.047(1.20)
.026TYP
(0.65TYP)
4
8
o
0
o
Features
* DTA114E and DTC114E transistors are
built-in a SOT-363 package.
* Transistor elements are independent,
eliminating interference.
* Mounting cost and area can be cut in half.
(3)
(2)
R
1
R
2
DT r
1
DT r
2
R
2
R
1
(4)
(5)
(6)
(1)
6
5
.021REF
(0.525)REF
.096(2.45)
.085(2.15)
.053(1.35)
.045(1.15)
1
2
3
.018(0.46)
.010(0.26)
.006(0.15)
.003(0.08)
.004(0.10)
.000(0.00)
.039(1.00)
.035(0.90)
.014(0.35)
.006(0.15)
.087(2.20)
.079(2.00)
.043(1.10)
.035(0.90)
MARKING:D3
R
1
=R
2
=10K
Dimensions in inches and (millimeters)
Electrical Characteristics( Tamb=25 C unless otherwise specified)
O
Parameter
Supply voltage
Input voltage
Output current
Power dissipation
Junction temperature
Storage temperature
Symbol
V
CC
V
IN
I
O
I
C(MAX)
Pd
Tj
Tstg
Limits
50
-10~40
50
100
150(TOTAL)
150
-55~150
Unit
V
V
mA
mW
℃
℃
Electrical characteristics (Ta=25℃)
Parameter
Input voltage
Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency
Symbol
V
I(off)
V
I(on)
V
O(on)
I
I
I
O(off)
G
I
R
1
R
2
/R
1
f
T
30
7
0.8
10
1
250
13
1.2
MHz
V
CE
=10V ,I
E
=-5mA,f=100MHz
KΩ
3
0.3
0.88
0.5
Min.
Typ
Max.
0.5
Unit
V
V
mA
µA
Conditions
V
CC
=5V ,I
O
=100μA
V
O
=0.3V ,I
O
=10mA
I
O
/I
I
=10mA/0.5mA
V
I
=5V
V
CC
=50V, V
I
=0
V
O
=5V,I
O
=5mA
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
01-Jan-2006 Rev.
B
Page 1 of
2
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
