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UMH11N 参数 Datasheet PDF下载

UMH11N图片预览
型号: UMH11N
PDF下载: 下载PDF文件 查看货源
内容描述: NPN MULT I-芯片内置电阻晶体管 [NPN Mult i-Chip Built-in Resistors Transistor]
分类和应用: 晶体晶体管开关光电二极管
文件页数/大小: 2 页 / 441 K
品牌: SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
 浏览型号UMH11N的Datasheet PDF文件第2页  
UMH11N
Elektronische Bauelemente
RoHS Compliant Product
NPN Multi-Chip
Built-in Resistors Transistor
SOT-363
Features
* Mounting possible with UMT3 automatic mounting
machines.
* Transistor elements are independent,
eliminating interference.
* Mounting cost and area can be cut in half.
* Two DTC114E chips in a UMT package
.055(1.40)
.047(1.20)
.026TYP
(0.65TYP)
.021REF
(0.525)REF
.096(2.45)
.085(2.15)
8
o
0
o
.053(1.35)
.045(1.15)
.018(0.46)
.010(0.26)
.014(0.35)
.006(0.15)
.006(0.15)
.003(0.08)
.004(0.10)
.000(0.00)
.039(1.00)
.035(0.90)
MARKING
H11
.087(2.20)
.079(2.00)
.043(1.10)
.035(0.90)
Dimensions in inches and (millimeters)
Absolute maximum ratings(Ta=25℃)
Parameter
Supply voltage
Input voltage
Output current
Power dissipation
Junction temperature
Storage temperature
Symbol
V
CC
V
IN
I
O
I
C(MAX)
Pd
Tj
Ts tg
Limits
50
-10~ 40
50
100
150(TOTAL)
150
-55~ 150
Unit
V
V
mA
mW
Electrical characteristics (Ta=25℃)
Parameter
Input voltage
Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency
Symbol
V
I(off)
V
I(on)
V
O(on)
I
I
I
O(off)
G
I
R
1
R
2
/R
1
f
T
30
7
0.8
10
1
250
13
1.2
MHz
V
CE
=10V ,I
E
=-5mA,f=100MHz
KΩ
3
0.3
0.88
0.5
Min.
Typ
Max.
0.5
Unit
V
V
mA
µA
Conditions
V
CC
=5V ,I
O
=100µA
V
O
=0.3V ,I
O
=10 mA
I
O
/I
I
=10mA/0.5mA
V
I
=5V
V
CC
=50V, V
I
=0
V
O
=5V ,I
O
=5mA
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
01-Jan-2006 Rev.
B
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