UMT1N
Elektronische Bauelemente
-0.15A , -60V
Dual PNP General Purpose Transistors
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Two 2SA1037AK chips in a package.
Mounting possible with SOT-363 automatic
mounting machines.
Transistor elements are independent, eliminating
interference.
Mounting cost and area can be cut in half.
A
E
6
5
4
SOT-363
L
B
MARKING：
：
T1
PACKAGE INFORMATION
Package
SOT-363
MPQ
3K
Leader Size
REF.
F
DG
1
2
3
C
K
H
J
7 inch
A
B
C
D
E
F
Millimeter
Min.
Max.
2.00
2.20
2.15
2.45
1.15
1.35
0.90
1.10
1.20
1.40
0.15
0.35
REF.
G
H
J
K
L
Millimeter
Min.
Max.
0.100 REF.
0.525 REF.
0.08
0.15
8°
0.650 TYP.
ABSOLUTE MAXIMUM RATINGS
(T
A
=25°C unless otherwise noted)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector Power dissipation
Junction & Storage temperature
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
C
P
C
T
J
, T
STG
Value
-60
-50
-6
-150
150
150, -55 ~ 150
Unit
V
V
V
mA
mW
℃
ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
C
ob
Min.
-60
-50
-6
-
-
120
-
-
-
Typ.
-
-
-
-
-
-
-
140
-
Max.
-
-
-
-0.1
-0.1
560
-0.5
-
5
Unit
V
µA
µA
Test Conditions
I
C
= -50µA, I
E
=0
I
C
= -1mA , I
B
=0
I
E
= -50µA , I
C
=0
V
CB
= -60V, I
E
=0
V
EB
= -6V, I
C
=0
V
CE
= -6V, I
C
= -1mA
I
C
= -50mA, I
B
= -5mA
V
CE
= -12V, I
E
=2mA,
f=100MHz
V
CB
=-12V, I
E
=0, f=1MHz
V
MHz
pF
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
15-Jul-2011 Rev. A
Page 1 of 1
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
