UMX1N
Elektronische Bauelemente
Dual NPN General Purpose Transistors
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Two 2SC2412K chips in a package.
Mounting possible with SOT-363 automatic
mounting machines.
Transistor elements are independent, eliminating
interference.
Mounting cost and area can be cut in half.
SOT-363
A
E
6
5
4
L
B
EQUIVALENT CIRCUIT
F
(3)
(2)
(1)
1
2
3
C
K
H
J
DG
Tr
1
Tr
2
(4)
(5)
(6)
REF.
A
B
C
D
E
F
MARKING：X1
Millimeter
Min.
Max.
2.00
2.20
2.15
2.45
1.15
1.35
0.90
1.10
1.20
1.40
0.15
0.35
REF.
G
H
J
K
L
Millimeter
Min.
Max.
0.100 REF.
0.525 REF.
0.08
0.15
8°
0.650 TYP.
ABSOLUTE MAXIMUM RATINGS at Ta = 25°C
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector Power dissipation
Junction & Storage temperature
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
C
P
C
T
J
, T
STG
Value
60
50
7
150
150
150, -55 ~ 150
Unit
V
V
V
mA
mW
℃
ABSOLUTE MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS at Ta = 25°C
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
C
ob
Min.
60
50
7
-
-
120
-
-
-
Typ.
-
-
-
-
-
-
-
180
2.0
Max.
-
-
-
0.1
0.1
560
0.4
-
3.5
Unit
V
V
A
A
Test Conditions
I
C
= 50A, I
E
=0
I
C
= 1mA , I
B
= 0
I
E
= 50A , I
C
= 0
V
CB
= 60V, I
E
=0
V
EB
= 7V, I
C
= 0
V
CE
= 6V, I
C
= 1mA
V
MHz
pF
I
C
= 50mA, I
B
= 5mA
V
CE
= 12V, I
C
= 2mA,
f=100MHz
V
CB
= 12V, I
E
= 0, f=1MHz
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
12-Jul-2010 Rev. A
Page 1 of 3
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
