UMZ1N
Elektronische Bauelemente
0.15 W,
±
150 mA,
±
60 V
Silicon Epitaxial Planar
Power Management (Dual Transistors)
SOT-363
A
E
L
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
2SA1037AK and 2SC2412K are housed independently in a package.
Transistor elements independent, eliminating interference.
Mounting cost and area can be cut in half.
B
MARKING AND EQUIVALENT CIRCUIT
6
5
4
3
C
2
B
1
E
F
DG
K
C
H
J
Z1
TR2
1
2
3
TR1
REF.
A
B
C
D
E
F
4 5
E B
6
C
Millimeter
Min.
Max.
2.00
2.20
2.15
2.45
1.15
1.35
0.90
1.10
1.20
1.40
0.15
0.35
REF.
G
H
J
K
L
Millimeter
Min.
Max.
0.100 REF.
0.525 REF.
0.08
0.15
8°
0.650 TYP.
TR1 ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current – Continuous
Collector Power Dissipation
Junction & Storage Temperature
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
, T
STG
RATINGS
60
50
7
0.15
0.15
150, -55~150
UNIT
V
V
V
A
W
℃
TR1 NPN ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
C
ob
MIN.
60
50
7
-
-
120
-
-
-
TYP.
-
-
-
-
-
-
-
180
2.0
MAX.
-
-
-
0.1
0.1
560
0.4
-
3.5
UNIT
V
V
V
µA
µA
V
MHz
pF
TEST CONDITIONS
I
C
=50µA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=50µA, I
C
=0
V
CB
=60V, I
E
=0
V
EB
=7V, I
C
=0
V
CE
=6V, I
C
=1mA
I
C
=50mA, I
B
=5mA
V
CE
=12V, I
C
=2mA, f=100MHz
V
CB
=12V, I
E
=0, f=1MHz
TR2 ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current – Continuous
Collector Power Dissipation
Junction & Storage Temperature
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
, T
STG
RATINGS
-60
-50
-6
-0.15
0.15
150, -55~150
UNIT
V
V
V
A
W
℃
TR2 PNP ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
C
ob
MIN.
-60
-50
-6
-
-
120
-
-
-
TYP.
-
-
-
-
-
-
-
140
-
MAX.
-
-
-
-0.1
-0.1
560
-0.5
-
5
UNIT
V
V
V
µA
µA
V
MHz
pF
TEST CONDITIONS
I
C
=-50µA, I
E
=0
I
C
=-1mA, I
B
=0
I
E
=-50µA, I
C
=0
V
CB
=-60V, I
E
=0
V
EB
=-6V, I
C
=0
V
CE
=-6V, I
C
=-1mA
I
C
=-50mA, I
B
=-5mA
V
CE
=-12V, I
C
=-2mA, f=100MHz
V
CB
=-12V, I
E
=0, f=1MHz
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
28-Oct-2009 Rev. B
Page 1 of 4
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
