2N3439
2N3440
MECHANICAL DATA
Dimensions in mm (inches)
8.89 (0.35)
9.40 (0.37)
7.75 (0.305)
8.51 (0.335)
HIGH VOLTAGE
NPN TRANSISTORS
FEATURES
4.19 (0.165)
4.95 (0.195)
12.70
(0.500)
min.
0.89 max.
(0.035)
7.75 (0.305)
8.51 (0.335)
dia.
• DUAL SILICON PLANAR EPITAXIAL NPN
TRANSISTOR
• HIGH VOLTAGE
5.08 (0.200)
typ.
APPLICATIONS:
2
1
0.66 (0.026)
1.14 (0.045)
0.71 (0.028)
0.86 (0.034)
2.54
(0.100)
3
These devices are particularly suited as dri-
vers in high-voltage low current inverters,
switing and series regulators.
45˚
TO39 PACKAGE
Pin 1 = Emitter
Pin 2 = Base
Pin 3 = Collector
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
V
CBO
V
CEO
V
EBO
I
C
I
B
P
tot
T
stg
T
j
Collector – Base Voltage (I
E
= 0)
Collector – Emitter Voltage (I
B
= 0)
Emitter – Base Voltage (I
C
= 0)
Collector Current
Base Current
Total Power Dissipation at T
case
£
25°C
T
amb
£
50°C
Storage Temperature
Junction Temperature
2N3439
450V
350V
2N3440
300V
250V
7V
1A
0.5A
5W
1W
–55 to 200°C
200°C
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
Prelim.12/99
SEME-LAB [ SEME LAB ]
