SILICON EPITAXIAL
NPN TRANSISTOR
2N4913
•
•
•
Low Collector Saturation Voltage.
Hermetic TO3 Metal Package.
Designed For General Purpose, Switching
and Power Amplifier Applications
Screening Options Available
•
ABSOLUTE MAXIMUM RATINGS
(TC = 25°C unless otherwise stated)
VCBO
VCEO
VEBO
IC
IB
PD
TJ
Tstg
Collector – Base Voltage
Collector – Emitter Voltage
Emitter – Base Voltage
Continuous Collector Current
Base Current
TC = 25°C
Total Power Dissipation at
Derate Above 25°C
Junction Temperature Range
Storage Temperature Range
40V
40V
5V
5A
1.0A
87.5W
0.5W/°C
-65 to +200°C
-65 to +200°C
THERMAL PROPERTIES
Symbols
R
θJC
Parameters
Thermal Resistance, Junction To Case
Min.
Typ.
Max.
2
Units
°C/W
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email:
sales@semelab-tt.com
Document Number 8300
Issue 1
Page 1 of 3
Website:
http://www.semelab-tt.com
SEME-LAB [ SEME LAB ]
