2N5014
MECHANICAL DATA
Dimensions in mm (inches)
8.89 (0.35)
9.40 (0.37)
SILICON EPITAXIAL
NPN TRANSISTOR
7.75 (0.305)
8.51 (0.335)
6.10 (0.240)
6.60 (0.260)
12.70
(0.500)
min.
0.89
max.
(0.035)
0.41 (0.016)
0.53 (0.021)
dia.
FEATURES
General purpose power transistor for
switching and linear applications in a
hermetic TO–39 package.
5.08 (0.200)
typ.
2
1
0.66 (0.026)
1.14 (0.045)
0.71 (0.028)
0.86 (0.034)
2.54
(0.100)
3
45°
TO–39 PACKAGE
PIN 1 – Emitter
PIN 2 – Base
PIN 3 – Collector
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise stated)
V
CBO
V
CER
V
EBO
I
C
P
TOT
T
J
T
STG
Collector – Base Voltage
Collector – Emitter Voltage
Emitter – Base Reverse Voltage
Continuous Collector Current
Total Device Dissipation
and Storage Temperature Range
T
C
= 25°C
Maximum Operating Junction Temperature
R = 10Ω
900V
900V
5V
2W
3.5A
200°C
-55 to 200°C
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise stated)
Parameter
I
CBO
hFE
fae
Collector Base Leakage Current
D.C Current Gain
Test Conditions
V
CB
= 900V
V
CE
= 10V
I
C
=0.02A
20
20
Min.
Typ.
Max.
0.012
180
Unit
mA
—
MHz
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
Document Number 3070
Issue 1
SEME-LAB [ SEME LAB ]
