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2N5430 参数 Datasheet PDF下载

2N5430图片预览
型号: 2N5430
PDF下载: 下载PDF文件 查看货源
内容描述: 中功率NPN硅晶体管 [MEDIUM POWER NPN SILICON TRANSISTOR]
分类和应用: 晶体晶体管局域网
文件页数/大小: 2 页 / 19 K
品牌: SEME-LAB [ SEME LAB ]
 浏览型号2N5430的Datasheet PDF文件第2页  
LAB
MECHANICAL DATA
Dimensions in mm (inches)
SEME
2N5430
MEDIUM POWER
NPN SILICON TRANSISTOR
6.35 (0.250)
8.64 (0.340)
3.68
(0.145) rad.
max.
3.61 (0.142)
3.86 (0.145)
rad.
24.33 (0.958)
24.43 (0.962)
0.71 (0.028)
0.86 (0.034)
Designed for switching and wide - band
amplifier applications
11.94 (0.470)
12.70 (0.500)
14.48 (0.570)
14.99 (0.590)
This product is available screened in
accordance with various military specs.
1.27 (0.050)
1.91 (0.750)
9.14 (0.360)
min.
4.83 (0.190)
5.33 (0.210)
EG. 2N5430CECC–QR–B
Built and screened in accordance with
CECC procedures.
Screened to sequence B.
TO66 Package.
Pin 1
Base
Pin 2
Emitter
Case
Collector
ABSOLUTE MAXIMUM RATINGS
(Tcase = 25°C unless otherwise stated)
V
CEO
V
CBO
V
EBO
I
C
I
B
P
D
T
j
T
stg
R
q
JC
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current – Continuous
Base Current
Total Device Dissipation at T
case
= 25°C
Derate above 25°C
Operating and
Storage Junction Temperature Range
Thermal Resistance, Junction to Case.
100 V
100 V
6V
7A
1A
40 W
228 mW / °C
–65 to 200°C
4.37 °C / W
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
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