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2N6261 参数 Datasheet PDF下载

2N6261图片预览
型号: 2N6261
PDF下载: 下载PDF文件 查看货源
内容描述: HOMETAXIAL -BASE中功率型硅NPN晶体管 [HOMETAXIAL-BASE MEDIUM POWER SILICON NPN TRANSISTOR]
分类和应用: 晶体晶体管
文件页数/大小: 2 页 / 22 K
品牌: SEME-LAB [ SEME LAB ]
 浏览型号2N6261的Datasheet PDF文件第2页  
2N6261
MECHANICAL DATA
Dimensions in mm(inches)
HOMETAXIAL-BASE
MEDIUM POWER SILICON
NPN TRANSISTOR
6.35 (0.250)
8.64 (0.340)
3.68
(0.145) rad.
max.
3.61 (0.142)
3.86 (0.145)
rad.
FEATURES
0.71 (0.028)
0.86 (0.034)
• f
T
= 800 kHz at 0.2A
11.94 (0.470)
12.70 (0.500)
24.33 (0.958)
24.43 (0.962)
14.48 (0.570)
14.99 (0.590)
• Maximum Safe-area of operation curves
for dc and pulse operation.
• V
CEV(sus)
= 90V min
• Low Saturation Voltage:
V
CE(sat = 1.0V at
I
C = 0.5A)
4.83 (0.190)
5.33 (0.210)
9.14 (0.360)
min.
1.27 (0.050)
1.91 (0.750)
APPLICATIONS
• Power Switching Circuits
• Series and shunt-regulator driver and
output stages
• High-fidelity amplifers
• Solenoid Drivers
TO–66
PIN 1 — Base
PIN 2 — Emitter
Case is Collector.
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
V
CBO
V
CEO
V
CER(sus)
V
CEV(sus)
V
EBO
I
C
I
B
P
D
T
j
,T
stg
,
Collector – Base Voltage
Collector – Emitter Voltage (with base open)
External Base – Emitter (RBE) = 100
W
)
Collector – Emitter Voltage (with base reverse biased)
Emitter to Base Voltage
Continuous Collector Current
Continuous Base Current
Total Power Dissipation at Tcase = 25°C
Derate above 25°C
Operating and Storage Junction Temperature Range
90V
80V
85V
90V
7V
4A
2A
50W
0.200°C
–65 to 200°C
In accordance with JEDEC registration data format
THERMAL CHARACTERISTICS
R
q
JC
Thermal Resistance, Junction to Case
3.5 °C/W
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
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