SILICON MULTI-EPITAXIAL
NPN TRANSISTOR
2N6277
ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise stated)
Symbols
V(BR)CEO
ICEO
ICEX
IEBO
ICBO
(1)
Parameters
Collector-Emitter
Breakdown Voltage
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
Collector Cut-Off Current
Test Conditions
IC = 10mA
VCE = 75V
VCE = 180V
IB = 0
VBE = -1.5V
TA = 150°C
VEB = 6V
VCB = 180V
IC = 1.0A
IC = 0
IE = 0
VCE = 4V
VCE = 4V
TA = -55°C
IC = 50A
VCE = 4V
IB = 2A
IB = 10A
IB = 2A
IB = 10A
VCE = 4V
Min.
150
Typ
Max.
Units
V
50
10
1.0
100
10
50
30
10
10
1.0
3.0
1.8
3.5
1.8
120
µA
mA
µA
hFE
(1)
Forward-current transfer
ratio
IC = 20A
VCE(sat)
(1)
Collector-Emitter Saturation
Voltage
Base-Emitter Saturation
Voltage
Base-Emitter On Voltage
IC = 20A
IC = 50A
IC = 20A
IC = 50A
IC = 20A
VBE(sat)
VBE(on)
(1)
V
DYNAMIC CHARACTERISTICS
| hfe |
Small signal forward-current
transfer ratio
Output Capacitance
IC = 1.0A
f = 10MHz
VCB = 10V
f = 1.0MHz
IC = 20A
IB1 = 2A
IC = 20A
IB1 = - IB2 = 2A
VCC = 80V
VCC = 80V
IE = 0
600
pF
VCE = 10V
2
12
Cobo
ton
toff
Turn-On Time
0.5
µs
1.6
Turn-Off Time
Notes
(1) Pulse Width
≤
300us,
δ ≤
2%
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email:
sales@semelab-tt.com
Website:
http://www.semelab-tt.com
Document Number 8537
Issue 1
Page 2 of 3
SEME-LAB [ SEME LAB ]
