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2N6659 参数 Datasheet PDF下载

2N6659图片预览
型号: 2N6659
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道增强型MOS晶体管 [N-CHANNEL ENHANCEMENT MODE MOS TRANSISTOR]
分类和应用: 晶体晶体管
文件页数/大小: 2 页 / 22 K
品牌: SEME-LAB [ SEME LAB ]
 浏览型号2N6659的Datasheet PDF文件第2页  
2N6659
MECHANICAL DATA
Dimensions in mm (inches)
8.89 (0.35)
9.40 (0.37)
7.75 (0.305)
8.51 (0.335)
N–CHANNEL
ENHANCEMENT MODE
MOS TRANSISTOR
FEATURES
• Switching Regulators
• Converters
4.19 (0.165)
4.95 (0.195)
12.70
(0.500)
min.
0.89 max.
(0.035)
7.75 (0.305)
8.51 (0.335)
dia.
5.08 (0.200)
typ.
• Motor Drivers
2.54
(0.100)
2
1
0.66 (0.026)
1.14 (0.045)
0.71 (0.028)
0.86 (0.034)
3
45˚
TO–39 METAL PACKAGE
Underside View
PIN 1 – Source
PIN 3 – Drain
PIN 2 – Gate
CASE – Drain
ABSOLUTE MAXIMUM RATINGS
(T
CASE
= 25°C unless otherwise stated)
V
DS
V
GS
I
D
I
D
I
DM
P
D
P
D
T
j
T
stg
T
L
Drain – Source Voltage
Gate – Source Voltage
Drain Current
Drain Current
Pulsed Drain Current *
Power Dissipation
Power Dissipation
Storage Temperature Range
Lead Temperature (
1
/
16
” from case for 10 sec.)
@ T
CASE
= 25°C
@ T
CASE
= 100°C
@ T
CASE
= 25°C
@ T
CASE
= 100°C
35V
±20V
1.4A
1A
3A
6.25W
2.5W
–55 to 150°C
–55 to 150°C
300°C
Operating Junction Temperature Range
* Pulse width limited by maximum junction temperature.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
Prelim. 4/00