N-CHANNEL ENHANCEMENT
MODE POWER MOSFET
2N6660
•
•
•
•
•
•
•
VDSS = 60V , ID = 1.0A, RDS(ON) = 3.0Ω
Fast Switching
Low Threshold Voltage (Logic Level)
Low CISS
Integral Source-Drain Body Diode
Hermetic Metal TO39 Package
High Reliability Screening Options Available
ABSOLUTE MAXIMUM RATINGS
(TC = 25°C unless otherwise stated)
VDS
VGS
ID
IDM
PD
PD
TJ
Tstg
Drain – Source Voltage
Gate – Source Voltage
Continuous Drain Current
Pulsed Drain Current
(1)
Total Power Dissipation at
Total Power Dissipation at
Operating Temperature Range
Storage Temperature Range
TC = 25°C
TC
≤
25°C
De-rate TC > 25°C
TA
≤
25°C
De-rate TA > 25°C
60V
±20V
1.0A
3.0A
5W
40mW/°C
725mW
5.8mW/°C
-65 to +150°C
-65 to +150°C
THERMAL PROPERTIES
Symbols
R
θJC
R
θJA
Parameters
Thermal Resistance, Junction To Case
Thermal Resistance, Junction To Ambient
Min.
Typ.
Max.
25
172
Units
°C/W
°C/W
Notes
(1) Repetitive Rating: Pulse width limited by maximum junction temperature
(2) Pulse Width
≤
300us,
δ ≤
2%
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email:
sales@semelab-tt.com
Document Number 8263
Issue 2
Page 1 of 3
Website:
http://www.semelab-tt.com
SEME-LAB [ SEME LAB ]
