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2N6845 参数 Datasheet PDF下载

2N6845图片预览
型号: 2N6845
PDF下载: 下载PDF文件 查看货源
内容描述: P沟道增强型高压功率MOSFET [P-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS]
分类和应用: 晶体晶体管开关脉冲高压局域网高电压电源
文件页数/大小: 2 页 / 37 K
品牌: SEME-LAB [ SEME LAB ]
 浏览型号2N6845的Datasheet PDF文件第2页  
2N6845
IRFF9120
MECHANICAL DATA
Dimensions in mm (inches)
8.64 (0.34)
9.40 (0.37)
8.01 (0.315)
9.01 (0.355)
4.06 (0.16)
4.57 (0.18)
P–CHANNEL
ENHANCEMENT MODE
HIGH VOLTAGE
POWER MOSFETS
12.70
(0.500)
min.
0.89 max.
(0.035)
0.41 (0.016)
0.53 (0.021)
dia.
5.08 (0.200)
typ.
V
DSS
I
D(cont)
R
DS(on)
2.54
(0.100)
-100V
-4.0A
0.60Ω
FEATURES
• HERMETICALLY SEALED TO–39 METAL
PACKAGE
• SIMPLE DRIVE REQUIREMENTS
• LIGHTWEIGHT
2
1
0.74 (0.029)
1.14 (0.045)
0.71 (0.028)
0.53 (0.021)
3
45°
• SCREENING OPTIONS AVAILABLE
PIN 3 – Drain
TO–39 (TO-205AF) METAL PACKAGE
PIN1 – Source
PIN 2 – Gate
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
V
GS
I
D
I
D
I
DM
P
D
T
J
, T
stg
T
L
R
θJC
Notes
1) Repetitive Rating – Pulse width limited by maximum junction temperature.
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Gate – Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
1
Power Dissipation @ T
case
= 25°C
Linear Derating Factor
Operating and Storage Temperature Range
Package Mounting Surface Temperature (for 5 sec)
Thermal Resistance Junction to Case
(V
GS
= 0 , T
case
= 25°C)
(V
GS
= 0 , T
case
= 100°C)
±20V
-4.0A
-2.6A
-16A
20 W
0.16 W/°C
–55 to 150°C
300°C
6.25°C/W
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Document Number 5748
Issue 2