SILICON PLANAR EPITAXIAL
NPN TRANSISTOR
BSS71
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise stated)
Symbols
V(BR)CEO
(1)
Parameters
Collector-Emitter
Breakdown Voltage
Collector-Base
Breakdown Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
Test Conditions
IC = 10mA
IC = 100µA
IE = 100µA
VCB = 150V
VCE = 150V
VEB = 5V
IC = 0.1mA
IB = 0
IE = 0
IC = 0
IE = 0
IB = 0
IC = 0
VCE = 1.0V
VCE = 10V
VCE = 10V
VCE = 10V
IB = 1.0mA
IB = 3mA
IB = 5mA
IB = 1.0mA
IB = 3mA
IB = 5mA
Min.
200
200
6
Typ
Max.
Units
V(BR)CBO
V(BR)EBO
ICBO
ICEO
IEBO
V
50
500
50
20
30
50
40
250
0.3
0.4
0.5
0.8
0.9
1.0
V
nA
hFE
(1)
Forward-current transfer
ratio
IC = 1.0mA
IC = 10mA
IC = 30mA
IC = 10mA
VCE(sat)
(1)
Collector-Emitter Saturation
Voltage
IC = 30mA
IC = 50mA
IC = 10mA
VBE(sat)
(1)
Base-Emitter Saturation
Voltage
IC = 30mA
IC = 50mA
DYNAMIC CHARACTERISTICS
fT
Transition Frequency
IC = 20mA
f = 20MHz
Output Capacitance
VCB = 20V
f = 1.0MHz
Input Capacitance
VEB = 0.5V
f = 1.0MHz
Turn-On Time
IC = 50mA
IB1 = 10mA
IC = 50mA
VCC = 100V
VCC = 100V
100
ns
400
IC = 0
45
IE = 0
3.5
pF
VCE = 20V
50
200
MHz
Cobo
Cibo
ton
toff
Turn-Off Time
IB1 = - IB2 = 10mA
Notes
(1) Pulse Width
≤
300us,
δ ≤
2%
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email:
sales@semelab-tt.com
Website:
http://www.semelab-tt.com
Document Number 8576
Issue 1
Page 2 of 3
SEME-LAB [ SEME LAB ]
