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BUX82 参数 Datasheet PDF下载

BUX82图片预览
型号: BUX82
PDF下载: 下载PDF文件 查看货源
内容描述: 大电流高速高功率硅NPN平面晶体管 [HIGH CURRENT HIGH SPEED HIGH POWER SILICON NPN PLANAR TRANSISTOR]
分类和应用: 晶体晶体管开关局域网高功率电源
文件页数/大小: 2 页 / 20 K
品牌: SEME-LAB [ SEME LAB ]
 浏览型号BUX82的Datasheet PDF文件第2页  
BUX82
MECHANICAL DATA
Dimensions in mm (inches)
25.15 (0.99)
26.67 (1.05)
10.67 (0.42)
11.18 (0.44)
1.52 (0.06)
3.43 (0.135)
6.35 (0.25)
9.15 (0.36)
HIGH CURRENT
HIGH SPEED
HIGH POWER
SILICON NPN PLANAR
TRANSISTOR
38.61 (1.52)
39.12 (1.54)
0.97 (0.060)
1.10 (0.043)
29.9 (1.177)
30.4 (1.197)
16.64 (0.655)
17.15 (0.675)
1
2
3
(case)
3.84 (0.151)
4.09 (0.161)
7.92 (0.312)
12.70 (0.50)
22.23
(0.875)
max.
Applications
The BUX82 is an epitaxial silicon NPN planar
transistor that has high current and high power
handling capability and high switching speed.
This device is especially suitable for
switching–control amplifiers, power gates, switch-
ing regulators, power-switching circuits convert-
ers, inverters and control circuits.Other recom-
mended applications include DC–RF amplifiers
and power oscillators.
TO–204AA (TO–3)
PIN 1 — Base
PIN 2 — Emitter
Case is Collector.
ABSOLUTE MAXIMUM RATINGS
(T
j
= 25°C unless otherwise stated)
V
CESM
V
CER
V
CEO
I
C
I
CM
I
B
P
tot
T
STG
T
J
Collector – Emitter Voltage
Collector – Emitter Voltage
Collector – Emitter Voltage(open base)
Collector Current (d.c)
Peak Collector Current
Base Current (d.c)
Total Power Dissipation T
mb
= 50°C
Storage Temperature Range
Maximum Junction Temperature
t
p
= 2ms
V
BE
= 0
R
BE
= 100
W
800V
500V
400V
6A
8A
2A
60W
-65 to +150°C
+150°C
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
Prelim.9/99