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D1009UK 参数 Datasheet PDF下载

D1009UK图片预览
型号: D1009UK
PDF下载: 下载PDF文件 查看货源
内容描述: 金属闸极射频硅场效应管 [METAL GATE RF SILICON FET]
分类和应用: 晶体晶体管射频放大器局域网
文件页数/大小: 5 页 / 53 K
品牌: SEME-LAB [ SEME LAB ]
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TetraFET
D1009UK
METAL GATE RF SILICON FET
MECHANICAL DATA
C
(2 pls)
B
G
(typ)
2
1
H
D
3
P
(2 pls) A
5
4
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
150W – 28V – 500MHz
PUSH–PULL
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
E
(4 pls)
F
I
N
M
O
J
K
• SUITABLE FOR BROAD BAND APPLICATIONS
DRAIN 1
GATE 2
DR
PIN 1
PIN 3
PIN 5
SOURCE (COMMON)
DRAIN 2
GATE 1
DIM
A
B
C
D
E
F
G
H
I
J
K
M
N
O
P
Millimetres
19.05
10.77
45°
9.78
5.71
27.94
1.52R
10.16
22.22
0.13
2.72
1.70
5.08
34.03
1.57R
Tol.
0.50
0.13
0.13
0.13
0.13
0.13
0.13
MAX
0.02
0.13
0.13
0.50
0.13
0.08
PIN 2
PIN 4
• LOW C
rss
• SIMPLE BIAS CIRCUITS
Inches
0.75
0.424
45°
0.385
0.225
1.100
0.060R
0.400
0.875
0.005
0.107
0.067
0.200
1.340
0.062R
Tol.
0.020
0.005
0.005
0.005
0.005
0.005
0.005
MAX
0.001
0.005
0.005
0.020
0.005
0.003
• LOW NOISE
• HIGH GAIN – 8 dB MINIMUM
APPLICATIONS
HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 500 MHz
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
P
D
BV
DSS
BV
GSS
I
D(sat)
T
stg
T
j
* Per Side
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
Prelim. 01/01
Power Dissipation
Drain – Source Breakdown Voltage *
Gate – Source Breakdown Voltage *
Drain Current *
Storage Temperature
Maximum Operating Junction Temperature
389W
70V
±20V
20A
–65 to 150°C
200°C